component
AO3406-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| ao3406-hxy-etched.glb | 8d ago |
| ao3406-hxy-etched.step | 8d ago |
| ao3406-hxy-hero.glb | 8d ago |
| ao3406-hxy-hero.overlay.json | 8d ago |
| ao3406-hxy.glb | 8d ago |
| ao3406-hxy.kicad_mod | 8d ago |
| ao3406-hxy.kicad_sym | 8d ago |
| ao3406-hxy.lbr | 8d ago |
| ao3406-hxy.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
AO3406-HXY
HXY MOSFET · MOSFETs · SOT-23-3L
AO3406-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET, rated for gate-source voltage of ±20 V and a gate threshold voltage VGS(th) of 0.8 V to 2.2 V. |
| 2 | D | passive | Drain of the MOSFET, rated for drain-source voltage of 30 V and continuous drain current of 5.8 A. |
| 3 | S | passive | Source of the MOSFET, with drain-source diode forward current rated at 5.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 30 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Drain current-continuous | ID | 5.8 | A | Tj=125℃ | 1 | ||
| Drain current-pulse | IDM | 20 | A | 1 | |||
| Drain-source diode forward current | Is | 5.8 | A | 1 | |||
| Maximum power dissipation | PD | 1.4 | W | 1 | |||
| Operating junction temperature range | Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction-to-ambient | Rth JA | 100 | ℃/W | 1 | |||
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate threshold voltage | VGS(th) | 0.8 | 1.4 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 24 | 28 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 32 | mΩ | VGS=4.5V, ID=4A | 2 | ||
| Diode forward voltage | VSD | 0.76 | 1.16 | V | VGS=0V, Is=1A | 2 |
CAD (KiCad official)
- Symbol:
AO3406-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
ao3406-hxy-etched.step/ao3406-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3406-hxy.step/ao3406-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
250438529bc8f4ce, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).