component
AO3400-ED
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 26d ago |
| viewers | 26d ago |
| ao3400-ed-etched.glb | 26d ago |
| ao3400-ed-etched.step | 26d ago |
| ao3400-ed-hero.glb | 26d ago |
| ao3400-ed-hero.overlay.json | 26d ago |
| ao3400-ed.glb | 26d ago |
| ao3400-ed.kicad_mod | 26d ago |
| ao3400-ed.kicad_sym | 26d ago |
| ao3400-ed.lbr | 26d ago |
| ao3400-ed.step | 26d ago |
| package.json | 26d ago |
| page.json | 20d ago |
| README.md | 20d ago |
AO3400-ED
HXY MOSFET · MOSFETs · SOT-23
AO3400-ED from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±12 V maximum and threshold of 0.5 V min to 1.2 V max at 250 µA. |
| 2 | S | passive | Source; N-channel MOSFET source terminal, continuous drain current rated 3 A and body diode forward current up to 3.3 A. |
| 3 | D | passive | Drain; drain-source voltage rated 20 V maximum, continuous drain current 3 A and pulsed 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 62 | 73 | mΩ | VGS=2.5V, ID=2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 43 | 55 | mΩ | VGS=4.5V, ID=2.8A | 2 | |
| Total Gate Charge | Qg | 2.9 | 5 | nC | VDS=10V,ID=3A, VGS=4.5V | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1.2 | V | VGS=0V,IS=3.3A | 2 | |
| Diode Forward Current | IS | 3.3 | A | 2 | |||
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ unless otherwise noted | 1 | |
| Drain Current-Continuous | ID | 3 | A | TA=25℃ unless otherwise noted | 1 | ||
| Drain Current-Pulsed | IDM | 12 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 0.9 | W | TA=25℃ unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 139 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
AO3400-ED - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3400-ed-etched.step/ao3400-ed-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3400-ed.step/ao3400-ed.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
a554205554cb2c80, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).