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AMT49100KJPTR-B-3
Public Made by Adomby adom
Allegro MicroSystems, LLC Gate Drivers, LQFP-48-EP(7x7). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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AMT49100KJPTR-B-3
Allegro MicroSystems, LLC · Gate Drivers · LQFP-48-EP(7x7)
AMT49100KJPTR-B-3 from Allegro MicroSystems, LLC, in a LQFP-48-EP(7x7). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | LA | input | Logic input controlling the phase A low-side gate drive, selectable active high or low with pull-down/pull-up, battery-voltage compliant (up to 80 V). |
| 2 | HB | input | Logic input controlling the phase B high-side gate drive, selectable active high or low with pull-down/pull-up, battery-voltage compliant (up to 80 V). |
| 3 | LB | input | Logic input controlling the phase B low-side gate drive, selectable active high or low with pull-down/pull-up, battery-voltage compliant (up to 80 V). |
| 4 | HC | input | Logic input controlling the phase C high-side gate drive, selectable active high or low with pull-down/pull-up, battery-voltage compliant (up to 80 V). |
| 5 | LC | input | Logic input controlling the phase C low-side gate drive, selectable active high or low with pull-down/pull-up, battery-voltage compliant (up to 80 V). |
| 6 | DIAG | output | Programmable diagnostic output providing fault flag (default), pulsed fault flag, temperature, or internal timer; rated -0.3 to 80 V. |
| 7 | SAL | output | Logic-level output showing the phase A state from a programmable threshold comparator. |
| 8 | SBL | output | Logic-level output showing the phase B state from a programmable threshold comparator. |
| 9 | SCL | output | Logic-level output showing the phase C state from a programmable threshold comparator. |
| 10 | SDO | tri_state | Serial data output, high impedance when STRn is high, outputs the status register fault flag (bit 15) as soon as STRn goes low. |
| 11 | SDI | input | Serial data logic input with pull-down, 16-bit word MSB first. |
| 12 | SCK | input | Serial clock logic input with pull-down, data latched on rising edge, 16 rising edges per write, must be held high when STRn changes. |
| 13 | STRn | input | Serial strobe (chip select) input with pull-up; when high, SCK and SDI activity is ignored and SDO is high impedance. |
| 14 | CS1P | input | Current sense amplifier 1 positive input, rated -4 to 6.5 V. |
| 15 | CS1M | input | Current sense amplifier 1 negative input, rated -4 to 6.5 V. |
| 16 | CS1O | output | Current sense amplifier 1 output, rated -0.3 to 6 V. |
| 17 | CS2P | input | Current sense amplifier 2 positive input, rated -4 to 6.5 V. |
| 18 | CS2M | input | Current sense amplifier 2 negative input, rated -4 to 6.5 V. |
| 19 | CS2O | output | Current sense amplifier 2 output, rated -0.3 to 6 V. |
| 20 | CS3P | input | Current sense amplifier 3 positive input, rated -4 to 6.5 V. |
| 21 | CS3M | input | Current sense amplifier 3 negative input, rated -4 to 6.5 V. |
| 22 | CS3O | output | Current sense amplifier 3 output, rated -0.3 to 6 V. |
| 23 | LSSC | passive | Low-side source return for phase C, connected to the low-side MOSFET source through a low-impedance track for gate discharge. |
| 24 | GLC | output | Low-side gate drive output for the phase C external N-channel MOSFET. |
| 25 | CC | passive | Phase C bootstrap capacitor high-side connection and positive supply for the high-side gate driver. |
| 26 | SC | passive | Phase C load connection sensing switched load voltage, negative side of the bootstrap capacitor and floating high-side driver supply return. |
| 27 | GHC | output | High-side gate drive output for the phase C external N-channel MOSFET. |
| 28 | LSSB | passive | Low-side source return for phase B, connected to the low-side MOSFET source through a low-impedance track for gate discharge. |
| 29 | GLB | output | Low-side gate drive output for the phase B external N-channel MOSFET. |
| 30 | CB | passive | Phase B bootstrap capacitor high-side connection and positive supply for the high-side gate driver. |
| 31 | SB | passive | Phase B load connection sensing switched load voltage, negative side of the bootstrap capacitor and floating high-side driver supply return. |
| 32 | GHB | output | High-side gate drive output for the phase B external N-channel MOSFET. |
| 33 | LSSA | passive | Low-side source return for phase A, connected to the low-side MOSFET source through a low-impedance track for gate discharge. |
| 34 | GLA | output | Low-side gate drive output for the phase A external N-channel MOSFET. |
| 35 | CA | passive | Phase A bootstrap capacitor high-side connection and positive supply for the high-side gate driver. |
| 36 | SA | passive | Phase A load connection sensing switched load voltage, negative side of the bootstrap capacitor and floating high-side driver supply return. |
| 37 | GHA | output | High-side gate drive output for the phase A external N-channel MOSFET. |
| 38 | VREG | power_out | Regulated gate drive supply, nominally 12 V, from the buck regulator or an external supply, requires at least 10 µF ceramic capacitor. |
| 39 | GND | power_in | Ground; both GND terminals must be connected together at the device. |
| 40 | GND | power_in | Ground; both GND terminals must be connected together at the device. |
| 41 | CP2 | passive | Charge pump capacitor terminal, connect at least 1 µF ceramic capacitor to CP1. |
| 42 | CP1 | passive | Charge pump capacitor terminal, connect at least 1 µF ceramic capacitor to CP2. |
| 43 | VBRG | input | Sense input to the top of the external MOSFET bridge and reference for the charge pump and NVM programming; needs at least 100 nF to GND, operating 4.5 to 80 V. |
| 44 | VBB | power_in | Main power supply of 10 to 80 V via reverse-voltage protection, decoupled with ceramic capacitors close to the pin. |
| 45 | HA | input | Logic input controlling the phase A high-side gate drive, selectable active high or low with pull-down/pull-up, battery-voltage compliant (up to 80 V). |
| 46 | ENABLE | input | Disables all gate drive outputs when pulled low in direct mode or after a timeout in watchdog mode; can be pulled to VBB. |
| 47 | RESETn | input | Resets faults when pulsed low and forces sleep when held low longer than tRSD; can be pulled to VBB. |
| 48 | LX | output | Buck converter inductor switching node, rated -1 to 80 V. |
| 49 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Allegro MicroSystems, LLC |
| Package | LQFP-48-EP(7x7) |
| Category | Motor Driver ICs |
| Pins | 49 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage | VBB | -0.3 | 80 | V | 3 | ||
| Drive Regulator Terminal | VREG | -0.3 | 16 | V | 3 | ||
| Buck Switch Terminal | VLX | -1 | 80 | V | LX | 3 | |
| Battery-Compliant Logic Input Terminals | VIB | -0.3 | 80 | V | HA, HB, HC, LA, LB, LC, ENABLE, RESETn | 3 | |
| Logic Input Terminals | VI | -0.3 | 6 | V | STRn, SCK, SDI | 3 | |
| Logic Output Terminals | VO | -0.3 | 6 | V | SDO, SAL, SBL, SCL | 3 | |
| Diagnostic Output Terminal | VDIAG | -0.3 | 80 | V | DIAG | 3 | |
| Sense Amplifier Inputs | VCSI | -4 | 6.5 | V | CSxP, CSxM | 3 | |
| Sense Amplifier Output | VCSO | -0.3 | 6 | V | CSxO | 3 | |
| Bridge Drain Monitor Terminal | VBRG | -5 | 85 | V | VBRG | 3 | |
| Ambient Operating Temperature Range | TA | -40 | 150 | °C | Limited by power dissipation | 3 | |
| Maximum Continuous Junction Temperature | TJ(max) | 165 | °C | 3 | |||
| Transient Junction Temperature | TJt | 180 | °C | Over temperature event not exceeding 10 seconds, lifetime duration not exceeding 10 hours, guaranteed by design characterization. | 3 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 3 | ||
| VBB Quiescent Current, Regulator Inactive | IBBQ | 1 | 2 | mA | VBB = VREG = 12 V, all gate drive outputs low | 6 | |
| VBB Sleep Current | IBBS | 10 | µA | VRESETn ≤ 300 mV, sleep mode, VBB < 60 V | 6 | ||
| VBRG Operating Range | VBRG | 4.5 | 48 | 80 | V | 6 | |
| VBRG Input Current | IBRGQ | 3 | 5 | mA | 6 | ||
| VBRG Sleep Input Current | IBRGS | 2 | µA | VRESETn ≤ 300 mV, sleep mode, VBRG < 60 V | 6 | ||
| VREG Functional Operating Input Range, Regulator Inactive | VREG | 11 | 14.5 | V | Operating; outputs active | 6 | |
| VREG Quiescent Current, Regulator Inactive | IREGQ | 20 | 30 | mA | VREG = 12 V, all gate drive outputs low | 6 | |
| VREG Sleep Current | IREGS | 100 | µA | VRESETn ≤ 300 mV, sleep mode, VREG = 12 V | 6 | ||
| Internal Logic I/O Regulator Voltage | VIO | 3.1 | 3.3 | 3.5 | V | VIO = 0, VREG > 6.5 V | 6 |
| Bootstrap Boost Voltage | VCX | 7.9 | 9.1 | 11 | V | w.r.t. VBRG, Boot capacitor fully charged | 6 |
| Bootstrap Diode Forward Voltage | VfBOOT | 0.4 | 0.7 | 1 | V | ID = 10 mA | 6 |
| Bootstrap Diode Current Limit | IDBOOT | 250 | 500 | 750 | mA | 6 | |
| System Clock Period | tOSC | 45 | 50 | 55 | ns | 6 | |
| Turn-On Time (High-Side) | tr(HS) | 110 | 454 | ns | CLOAD = 30 nF, 2 V to 8 V, VCx, VSx = 11 V | 7 | |
| Turn-Off Time (High-Side) | tf(HS) | 47 | 250 | ns | CLOAD = 30 nF, 8 V to 2 V, VCx, VSx = 11 V | 7 | |
| Pull-Up On-Resistance | RDS(on)UP | 2.5 | 8 | Ω | TJ = 25°C, IGH = -150 mA | 7 | |
| Pull-Down On-Resistance | RDS(on)DN | 0.6 | 1.9 | Ω | TJ = 25°C, IGL = 150 mA | 7 | |
| Number of Write Cycles | NWC | 400 | TJ ≤ 85ºC | 7 | |||
| Turn-Off Propagation Delay | tP(off) | 73 | ns | Phase input change to unloaded gate output change (see Figure 4); DT[6:0] = 0 | 8 | ||
| Turn-On Propagation Delay | tP(on) | 58 | ns | Phase input change to unloaded gate output change (see Figure 4); DT[6:0] = 0 | 8 | ||
| Dead Time (Turn-Off to Turn-On Delay) | tDEAD | 1.35 | 1.6 | 1.85 | µs | Default power-up state (see Figure 4) | 8 |
| Input Low Voltage | VIL | 0.8 | V | RESETn | 9 | ||
| Input High Voltage | VIH | 2.4 | V | RESETn | 9 | ||
| Input Hysteresis | VIhys | 200 | 550 | 800 | mV | Except RESETn | 9 |
| Output Low Voltage | VOL | 0.2 | 0.4 | V | IOL = 1 mA | 9 | |
| Output Leakage SDO | IOSD | -1 | 1 | µA | 0 V < VSDO < VIO, STRn = 1 | 9 | |
| Reset Pulse Width | tRST | 1 | 4.5 | µs | 9 | ||
| Clock High Time | tSCKH | 50 | ns | A in Figure 3 | 9 | ||
| Data In Setup Time To Clock Rising | tSDIS | 15 | ns | J in Figure 3 | 9 | ||
| Input Offset Voltage | VIOS | -1 | 1 | mV | After VIOS calibration | 10 | |
| Gain Error | EA | -1.6 | 1.6 | % | VCM in range | 10 | |
| Gain Drift Over Temperature | EAD | -50 | 50 | ppm/°C | VCM in range | 10 | |
| Input Common-Mode Range (DC) | VCM | -1.5 | 2 | V | VID = 0 V | 10 | |
| Small Signal -3 dB Bandwidth | BW | 1 | MHz | Gain = 20 V/V, VIN = 10 mVpp | 10 | ||
| VREG Undervoltage Rising | VRON | 7.7 | 8 | 8.3 | V | VREG rising | 11 |
| VREG Undervoltage Falling | VROFF | 7 | 7.25 | 7.5 | V | VREG falling | 11 |
| VREG Overvoltage Warning | VROV | 14.8 | 15.4 | 16.1 | V | VREG rising | 11 |
| VBB Undervoltage Rising | VBBON | 9.1 | 9.5 | 9.9 | V | VBB rising | 11 |
| VBB Undervoltage Falling | VBBOFF | 8.1 | 8.5 | 8.9 | V | VBB falling | 11 |
| ENABLE Input Timeout | tETO | 90 | 100 | 110 | ms | 11 | |
| Temperature Warning Threshold | TJW | 125 | 135 | 145 | °C | Temperature increasing | 12 |
| Overtemperature Threshold | TJF | 165 | 175 | 185 | °C | Temperature increasing | 12 |
| Thermal Resistance Junction-to-Ambient, JP Package | RθJA | 23 | °C/W | 4-layer PCB based on JEDEC standard | 3 | ||
| Thermal Resistance Junction-to-Ambient, JP Package | RθJA | 44 | °C/W | 2-layer PCB with 3.8 in.2 of copper area each side | 3 | ||
| Thermal Resistance Junction-to-Pad, JP Package | RθJP | 2 | °C/W | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | with exposed thermal pad. The package is lead (Pb) free with 100% matte-tin leadframe plating. | 1 |
CAD (KiCad official)
- Symbol:
AMT49100KJPTR-B-3 - Footprint:
Package_QFP:LQFP-48-1EP_7x7mm_P0.5mm_EP3.6x3.6mm - 3D model: LQFP-48-EP(7x7) (KiCad packages3D, STEP)
- 3D model files:
amt49100kjptr-b-3-etched.step/amt49100kjptr-b-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);amt49100kjptr-b-3.step/amt49100kjptr-b-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Allegro MicroSystems, LLC datasheet (73 pp, sha256
b8b11ad0be155771, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).