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AMD540CE-VB

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VBsemi Elec MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AMD540CE-VB

VBsemi Elec · MOSFETs · TO-252-4L

AMD540CE-VB from VBsemi Elec, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of channel 1 of the N- and P-pair; the datasheet gives a pulsed source-diode current of 32 A for the channel.
2 G1 input Gate terminal of channel 1; gate-source voltage is rated at ±20 V and RDS(on) is specified at VGS = ±10 V and ±4.5 V.
3 S2 passive Source terminal of channel 2 of the N- and P-pair; the datasheet gives a pulsed source-diode current of 32 A for the channel.
4 G2 input Gate terminal of channel 2; gate-source voltage is rated at ±20 V and RDS(on) is specified at VGS = ±10 V and ±4.5 V.
5 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252-4L
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 40 V 1
Drain-Source Voltage (P-Ch) VDS -40 V 1
Gate-Source Voltage (N-Ch and P-Ch) VGS -20 20 V 1
Continuous Drain Current (N-Ch) ID 50 A TC = 25 °C 1
Continuous Drain Current (P-Ch) ID -50 A TC = 25 °C 1
Continuous Drain Current (N-Ch) ID 35 A TC = 125 °C 1
Continuous Drain Current (P-Ch) ID -35 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) (N-Ch) IS 50 A 1
Continuous Source Current (Diode Conduction) (P-Ch) IS -50 A 1
Pulsed Drain Current (N-Ch) IDM 150 A 1
Pulsed Drain Current (P-Ch) IDM -150 A 1
Single Pulse Avalanche Current (N-Ch) IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Ch) IAS -30 A L = 0.1 mH 1
Single Pulse Avalanche Energy (N-Ch) EAS 245 mJ 1
Single Pulse Avalanche Energy (P-Ch) EAS 245 mJ 1
Maximum Power Dissipation (N-Ch) PD 108 W TC = 25 °C 1
Maximum Power Dissipation (P-Ch) PD 108 W TC = 25 °C 1
Maximum Power Dissipation (N-Ch) PD 32 W TC = 125 °C 1
Maximum Power Dissipation (P-Ch) PD 32 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Junction-to-Ambient (N-Ch) RthJA 85 °C/W PCB Mount, 1" square PCB (FR4) 1
Junction-to-Ambient (P-Ch) RthJA 85 °C/W PCB Mount, 1" square PCB (FR4) 1
Junction-to-Case (Drain) (N-Ch) RthJC 3.1 °C/W 1
Junction-to-Case (Drain) (P-Ch) RthJC 3.1 °C/W 1
Drain-Source Breakdown Voltage (N-Ch) VDS 40 V VGS = 0 V, ID = 250 μA 2
Drain-Source Breakdown Voltage (P-Ch) VDS -40 V VGS = 0 V, ID = -250 μA 2
Gate-Source Threshold Voltage (N-Ch) VGS(th) 1 3 V VDS = VGS, ID = 250 μA 2
Gate-Source Threshold Voltage (P-Ch) VGS(th) -1 -3 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage (N-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Gate-Source Leakage (P-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 μA VGS = 0 V, VDS = 40 V 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 μA VGS = 0 V, VDS = -40 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 50 μA VGS = 0 V, VDS = 40 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -50 μA VGS = 0 V, VDS = -40 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 150 μA VGS = 0 V, VDS = 40 V, TJ = 175 °C 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -150 μA VGS = 0 V, VDS = -40 V, TJ = 175 °C 2
On-State Drain Current (N-Ch) ID(on) 25 A VGS = 10 V, VDS 5 V 2
On-State Drain Current (P-Ch) ID(on) -25 A VGS = - 10 V, VDS 5 V 2
Input Capacitance (N-Ch) Ciss 1799 2248 pF VGS = 0 V, VDS = 20 V, f = 1 MHz 2
Input Capacitance (P-Ch) Ciss 2000 3500 pF VGS = 0 V, VDS = - 20 V, f = 1 MHz 2
Output Capacitance (N-Ch) Coss 282 352 pF VGS = 0 V, VDS = 20 V, f = 1 MHz 2
Output Capacitance (P-Ch) Coss 320 550 pF VGS = 0 V, VDS = - 20 V, f = 1 MHz 2
Reverse Transfer Capacitance (N-Ch) Crss 109 136 pF VGS = 0 V, VDS = 20 V, f = 1 MHz 2
Reverse Transfer Capacitance (P-Ch) Crss 220 360 pF VGS = 0 V, VDS = - 20 V, f = 1 MHz 2
Gate Resistance (N-Ch) Rg 2 4.11 6.2 Ω f = 1 MHz 2
Gate Resistance (P-Ch) Rg 3.1 6.3 9.5 Ω f = 1 MHz 2
Turn-On Delay Time (N-Ch) td(on) 7 11 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Ch) td(on) 11 17 ns VDD = -20 V, RL = 2 Ω, ID ≈ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Rise Time (N-Ch) tr 21 32 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time (P-Ch) tr 9 14 ns VDD = -20 V, RL = 2 Ω, ID ≈ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-Off Delay Time (N-Ch) td(off) 33 50 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Ch) td(off) 55 83 ns VDD = -20 V, RL = 2 Ω, ID ≈ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Fall Time (N-Ch) tf 19 29 ns VDD = 20 V, RL = 2 Ω, ID ≈ 10 A, VGEN = 10 V, Rg = 1 Ω 3
Fall Time (P-Ch) tf 91 137 ns VDD = -20 V, RL = 2 Ω, ID ≈ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Pulsed Current (N-Ch) ISM 32 A 3
Pulsed Current (P-Ch) ISM -32 A 3
Forward Voltage (N-Ch) VSD 0.79 1.2 V IS = 4 A 3
Forward Voltage (P-Ch) VSD -0.82 -1.2 V IS = -4 A 3

CAD (KiCad official)

  • Symbol: AMD540CE-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4L (KiCad packages3D, STEP)
  • 3D model files: amd540ce-vb-etched.step / amd540ce-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); amd540ce-vb.step / amd540ce-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (13 pp, sha256 dc4694eda188138d, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF