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AMC3336DWER

TEXAS INSTRUMENTS · Global Sourcing Parts · SOIC-16-300mil

AMC3336DWER from TEXAS INSTRUMENTS, in a SOIC-16-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 DCDC_OUT power_out High-side output of the DC/DC converter; connect this pin to the HLDO_IN pin (pin 3).
2 DCDC_HGND power_in High-side ground reference for the DC/DC converter; connect this pin to the HGND pin (pin 8).
3 HLDO_IN power_in Input of the high-side LDO; connect this pin to the DCDC_OUT pin (pin 1).
4 NC unconnected No internal connection; connect to the high-side ground or leave floating.
5 HLDO_OUT power_out Output of the high-side LDO, which outputs a constant voltage and can provide limited current to external circuitry.
6 INP input Noninverting analog input; either INP or INN must have a DC current path to HGND to define the common-mode input voltage.
7 INN input Inverting analog input; either INP or INN must have a DC current path to HGND to define the common-mode input voltage.
8 HGND power_in High-side analog signal ground; connect this pin to the DCDC_HGND pin (pin 2).
9 GND power_in Low-side analog signal ground; connect this pin to the DCDC_GND pin (pin 15).
10 DOUT output Modulator bitstream data output; the DOUT pin is held permanently low when the high-side supply is lost or in undervoltage.
11 CLKIN input Modulator clock input with internal pull-down resistor (typical value 1.5 MΩ); input clock frequency 9 MHz to 21 MHz with 40% to 60% duty cycle.
12 VDD power_in Low-side power supply, 3 V to 5.5 V per recommended operating conditions; see the Power Supply Recommendations section for decoupling.
13 LDO_OUT power_out Output of the low-side LDO; connect to the DCDC_IN pin (pin 16) and do not load it with external circuitry.
14 DIAG output Active-low, open-drain status indicator output; connect to a pullup supply (for example VDD) through a resistor, or leave floating if not used.
15 DCDC_GND power_in Low-side ground reference for the DC/DC converter; connect this pin to the GND pin (pin 9).
16 DCDC_IN power_in Low-side input of the DC/DC converter; connect this pin to the LDO_OUT pin (pin 13).

Key specifications

Parameter Value
Manufacturer TEXAS INSTRUMENTS
Package SOIC-16-300mil
Category Global Sourcing Parts
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power-supply voltage VDD to GND -0.3 6.5 V 4
Digital output voltage DIAG 6.5 V 4
Input current, continuous, any pin except power-supply pins -10 10 mA 4
Junction temperature TJ TJ 150 °C 4
Storage temperature Tstg Tstg -65 150 °C 4
Power-supply voltage VDD VDD 3 3.3 5.5 V VDD to GND 4
Differential input voltage before clipping VClipping -1.25 1.25 V VIN = VINP, VINN 4
Specified linear differential full-scale voltage VFSR -1 1 V VIN = VINP, VINN 4
Absolute common-mode input voltage -2 V (VINP + VINN) / 2 to HGND; max is VHLDO_OUT (not numeric) 4
Operating common-mode input voltage VCM -0.8 0.6 V (VINP + VINN) / 2 to HGND 4
Digital input / output voltage VIO 0 V max is VDD (not numeric) 4
Input clock frequency fCLKIN 9 20 21 MHz 4
Input clock duty cycle 40 50 60 % 9 MHz ≤ fCLKIN ≤ 21 MHz 4
Specified ambient temperature TA -40 125 °C 4
Maximum power dissipation PD 231 mW VDD = 5.5 V 5
Maximum power dissipation PD 151 mW VDD = 3.6 V 5
Single-ended input resistance RIN 0.06 1 GΩ INN = HGND 8
Differential input resistance RIND 0.06 1 GΩ 8
Input bias current IIB -10 10 nA INP = INN = HGND; IIB = (IIBP + IIBN) / 2 8
Input offset current IIO -5 0.5 5 nA IIO = IIBP, IIBN 8
Offset error EO -0.3 0.04 0.3 mV INP = INN = HGND, TA = 25°C 8
Offset error thermal drift TCEO -4 4 µV/°C 8
Gain error EG -0.2 0.2 % TA = 25°C 8
Gain error thermal drift TCEG -40 40 ppm/°C 8
Differential nonlinearity DNL -0.99 0.99 LSB Resolution: 16 bits 8
Integral nonlinearity, differential measurement INL -4 4 LSB Differential measurement; Resolution: 16 bits 8
Integral nonlinearity, single-ended measurement INL -6 6 LSB Single-ended measurement; Resolution: 16 bits 8
Signal-to-noise ratio SNR 80 84 dB fIN = 1 kHz 8
Signal-to-noise + distortion SINAD 77 84 dB fIN = 1 kHz 8
Total harmonic distortion THD -93 -80 dB VIN = 2 VPP, fIN = 1 kHz 8
Spurious-free dynamic range SFDR 79 96 dB VIN = 2 VPP, fIN = 1 kHz 8
Low-level input voltage VIL -0.3 V max is 0.3 × VDD (not numeric) 8
High-level output voltage VOL 0.1 V IOL = 20 µA 8
Low-level output voltage VOL 0.4 V IOL = 4 mA 8
Common-mode transient immunity CMTI 90 150 kV/μs 8
DC/DC output voltage VDCDC_OUT 3.1 3.5 4.65 V DCDC_OUT to HGND 9
DC/DC output undervoltage detection threshold voltage VDCDCUV 2.1 2.25 V VDCDC_OUT falling 9
High-side LDO output voltage VHLDO_OUT 3 3.2 3.4 V HLDO_OUT to HGND, up to 1 mA external load 9
High-side LDO output undervoltage detection threshold voltage VHLDOUV 2.4 2.6 V VHLDO_OUT falling 9
High-side supply current for auxiliary circuitry IH 1 mA Load from HLDOout to HGND; non-switching; -40℃ ≤ TA ≤ 85℃ 9
Low-side supply current IDD 28.5 42.5 mA no external load on HLDO 9
Low-side supply current IDD 30.5 44.5 mA 1 mA external load on HLDO 9
Device startup time tSTART 0.6 1.1 ms VDD step from 0 to 3.0 V to bitstream valid 9
Output load capacitance CLOAD 15 30 pF 8
DOUT rise time tr 2.5 6 ns 10% to 90%, 3.0 V ≤ VDD ≤ 3.6 V, CLOAD = 15 pF 10
DOUT rise time tr 3.2 6 ns 10% to 90%, 4.5 V ≤ VDD ≤ 5.5 V, CLOAD = 15 pF 10
DOUT fall time tf 2.2 6 ns 10% to 90%, 3.0 V ≤ VDD ≤ 3.6 V, CLOAD = 15 pF 10
DOUT fall time tf 2.9 6 ns 10% to 90%, 4.5 V ≤ VDD ≤ 5.5 V, CLOAD = 15 pF 10
VDD analog undervoltage detection threshold VDDUV 2.9 V VDD rising 9
VDD digital reset threshold VDDPOR 2.5 V VDD rising 9
Input current (leakage) IIN 7 μA GND ≤ VIN ≤ VDD 8
Common-mode rejection ratio CMRR -104 dB INP = INN, fIN = 0 Hz, VCM min ≤ VCM ≤ VCM max 8
Power-supply rejection ratio PSRR -109 dB VDD from 3.0 V to 5.5 V, at dc 8
Digital output hold time after rising edge of CLKIN tH 3.5 ns CLOAD = 15 pF; CLKIN 50% to DOUT 10% / 90% 10
Rising edge of CLKIN to DOUT valid delay tD 15 ns CLOAD = 15 pF; CLKIN 50% to DOUT 10% / 90% 10
Junction-to-ambient thermal resistance RθJA 73.5 °C/W 5
Junction-to-case (top) thermal resistance RθJC(top) 31 °C/W 5
Junction-to-board thermal resistance RθJB 44 °C/W 5
Junction-to-top characterization parameter ψJT 16.7 °C/W 5
Junction-to-board characterization parameter ψJB 42.8 °C/W 5

CAD (KiCad official)

  • Symbol: AMC3336DWER
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16-300mil (KiCad packages3D, STEP)
  • 3D model files: amc3336dwer-etched.step / amc3336dwer-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); amc3336dwer.step / amc3336dwer.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TEXAS INSTRUMENTS datasheet (40 pp, sha256 6ec59953abfa0cd0, retrieved 2026-10-20, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF