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AMC23C12QDWVRQ1

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Texas Instruments Isolated Comparators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsignal isolation devicesamc23c12qdwvrq1factory-2.0.0extractor-text

Verified AMC23C12QDWVRQ1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AMC23C12QDWVRQ1 · SOIC-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 43-page datasheet
  • ✓distributor: lcsc C7072717, digikey 296-AMC23C12QDWVRQ1TR-ND, mouser 595-AMC23C12QDWVRQ1
  • ✓family: SOIC-8_7.5x5.85mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-p6vtg1k7/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.40)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ amc23c12qdwvrq1.kicad_sym✓ amc23c12qdwvrq1.kicad_mod✓ amc23c12qdwvrq1.step
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Ray Publish 0.1.0 1cb97e2 3d ago

AMC23C12QDWVRQ1

Texas Instruments · Isolated Comparators · SOIC-8

AMC23C12QDWVRQ1 from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in High-side power supply, specified from 3 V to 25 V in the features list; see the Layout section for decoupling recommendations.
2 IN input Common analog input for window comparators 1 and 2; the comparator trips when the absolute value of this input exceeds the trip threshold.
3 REF input Reference pin that sets the trip threshold through a resistor to GND1, with an internal 100-μA current source and a filter capacitor to GND1; it can also be driven by an external voltage source.
4 GND1 power_in High-side ground for the input and threshold circuitry.
5 GND2 power_in Low-side ground for the output and low-side supply.
6 OUT1 output Open-drain output of window comparator 1; connect to an external pullup resistor or leave floating when not used.
7 OUT2 output Open-drain output of window comparator 2; connect to an external pullup resistor or leave floating when not used.
8 VDD2 power_in Low-side power supply, specified from 2.7 V to 5.5 V in the features list; see the Layout section for decoupling recommendations.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
High-side supply voltage VDD1 to GND1 -0.3 30 V VDD1 to GND1 4
Low-side supply voltage VDD2 to GND2 -0.3 6.5 V VDD2 to GND2 4
REF analog input voltage REF to GND1 -0.5 6.5 V REF to GND1 4
IN analog input voltage IN to GND1 -6 5.5 V IN to GND1 4
Input current -10 10 mA Continuous, any pin except power-supply pins 4
Junction temperature TJ 150 °C 4
Storage temperature Tstg -65 150 °C 4
ESD HBM V(ESD) -2000 2000 V Human-body model (HBM), per AEC Q100-002 4
ESD CDM V(ESD) -1000 1000 V Charged-device model (CDM), per AEC Q100-011 4
High-side power-supply voltage VVDD1 3 5 25 V VDD1 to GND1 5
Low-side power-supply voltage VVDD2 2.7 3.3 5.5 V VDD2 to GND2 5
Input voltage VIN -0.4 4 V IN to GND1, VDD1 > 4.3 V 5
Reference voltage, window comparator mode VREF 20 300 mV REF to GND1 5
Reference voltage, positive-comparator mode, low hysteresis VREF 20 450 mV Low hysteresis mode 5
Reference voltage, positive-comparator mode, high hysteresis VREF 600 2700 mV High hysteresis mode (Cmp0 only) 5
Reference voltage headroom VDD1, VREF 1.4 V 5
Filter capacitance on REF pin 20 100 nF 5
Sink current OUT 0 4 mA 5
Specified ambient temperature TA -40 25 125 °C 5
Junction-to-ambient thermal resistance RθJA 102.8 °C/W DWV (SOIC), 8 pins 5
Junction-to-case (top) thermal resistance RθJC(top) 45.1 °C/W DWV (SOIC), 8 pins 5
Junction-to-board thermal resistance RθJB 63 °C/W DWV (SOIC), 8 pins 5
Input resistance RIN 1 GΩ IN pin, 0 ≤ VIN ≤ 4 V 8
Input bias current IBIAS 0.1 25 nA IN pin, 0 ≤ VIN ≤ 4 V 8
Input bias current IBIAS -310 -0.5 nA IN pin, -400 mV ≤ VIN ≤ 0 V 8
Input capacitance IN CIN 4 pF IN pin 8
Reference current IREF 99 100 101 μA REF to GND1, 20 mV < VREF ≤ 2.7 V 8
Mode selection threshold, rising VMSEL 500 550 600 mV VREF rising 8
Mode selection threshold, falling VMSEL 450 500 550 mV VREF falling 8
Mode selection threshold hysteresis 50 mV 8
Cmp0 positive-going trip threshold error EIT+ -2 2 mV Cmp0, (VIT+, VREF, VHYS), VREF = 20 mV, VHYS = 4 mV 8
Cmp0 positive-going trip threshold error EIT+ -5 5 mV Cmp0, (VIT+, VREF, VHYS), VREF = 2 V, VHYS = 25 mV 8
Cmp0 negative-going trip threshold error EIT- -2.5 2.5 mV Cmp0, (VIT-, VREF), VREF = 20 mV 8
Cmp0 negative-going trip threshold error EIT- -5 5 mV Cmp0, (VIT-, VREF), VREF = 2 V 8
Cmp1 negative-going trip threshold error EIT- -3 3 mV Cmp1, (VIT- + VREF + VHYS), VREF = 20 mV, VHYS = 4 mV 8
Cmp1 positive-going trip threshold error EIT+ -3.5 3.5 mV Cmp1, (VIT+ + VREF), VREF = 20 mV 8
Trip threshold hysteresis VHYS 4 mV Cmp0 and Cmp1, (VIT+, VIT-), VREF ≤ 450 mV 8
Trip threshold hysteresis VHYS 25 mV Cmp0 only, (VIT+, VIT-), VREF ≥ 600 mV 8
Input capacitance LATCH CIN 4 pF LATCH pin 8
Low-level output voltage VOL 80 250 mV ISINK = 4 mA 8
Open-drain output leakage current ILKG 5 100 nA VDD2 = 5 V, VOUT = 5 V 8
Common-mode transient immunity CMTI 55 110 V/ns /VIN, VREF/ ≥ 4 mV, RPULLUP = 10 kΩ 8
VDD1 undervoltage detection threshold, rising VDD1UV 3 V VDD1 rising 9
VDD1 undervoltage detection threshold, falling VDD1UV 2.9 V VDD1 falling 9
VDD1 power-on reset threshold VDD1POR 2.3 V VDD1 falling 9
VDD2 undervoltage detection threshold, rising VDD2UV 2.7 V VDD2 rising 9
VDD2 undervoltage detection threshold, falling VDD2UV 2.1 V VDD2 falling 9
High-side supply current IDD1 3.2 4.3 mA 9
Low-side supply current IDD2 1.8 2.2 mA 9
LATCH deglitch time 1.8 3.2 µs Falling edge 10
Propagation delay time, /VIN/ rising tpH 280 410 ns VDD2 = 3.3 V, VREF = 250 mV, VOVERDRIVE = 10 mV, CL = 15 pF 10
Propagation delay time, /VIN/ rising tpH 240 370 ns VDD2 = 3.3 V, VREF = 2 V, VOVERDRIVE = 50 mV, CL = 15 pF 10
Propagation delay time, /VIN/ falling tpL 280 410 ns VDD2 = 3.3 V, VREF = 250 mV, VOVERDRIVE = 10 mV, CL = 15 pF 10
Propagation delay time, /VIN/ falling tpL 240 370 ns VDD2 = 3.3 V, VREF = 2 V, VOVERDRIVE = 50 mV, CL = 15 pF 10
Output signal fall time tf 2 ns RPULLUP = 4.7 kΩ, CL = 15 pF 10

CAD (KiCad official)

  • Symbol: AMC23C12QDWVRQ1
  • Footprint: Package_SO:SOIC-8_7.5x5.85mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: amc23c12qdwvrq1-etched.step / amc23c12qdwvrq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); amc23c12qdwvrq1.step / amc23c12qdwvrq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (43 pp, sha256 f2ed3aa900354fc3, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF