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AMC131M03DFMR

TEXAS INSTRUMENTS · Global Sourcing Parts · SOIC-20

AMC131M03DFMR from TEXAS INSTRUMENTS, in a SOIC-20. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 DCDC_OUT power_out High-side output of the DC/DC converter, which must be connected to the HLDO_IN pin.
2 DCDC_HGND power_in High-side ground reference for the DC/DC converter, which must be connected to the HGND pin.
3 HLDO_IN power_in Input of the high-side low-dropout regulator, which must be connected to the DCDC_OUT pin.
4 HLDO_OUT power_out Output of the high-side low-dropout regulator.
5 HGND power_in High-side analog signal ground, which must be connected to the DCDC_HGND pin.
6 AIN2P/GPO passive Positive analog input 2, or general-purpose output.
7 AIN12N passive Negative analog input 1 and 2.
8 AIN1P passive Positive analog input 1.
9 AIN0P passive Positive analog input 0; use AIN0P and AIN0N for the measurement with the most stringent precision requirements.
10 AIN0N passive Negative analog input 0; use together with AIN0P for the measurement with the most stringent precision requirements.
11 SYNC/RESET input Conversion synchronization or system reset input, active low.
12 DOUT output Serial data output.
13 DVDD power_in Low-side analog and digital power supply, specified from 3 V to 5.5 V.
14 DCDC_CAP power_in Low-side input of the DC/DC converter, internally connected to the output of the primary-side LDO.
15 DGND power_in Low-side analog and digital ground.
16 DRDY output Data ready output, active low.
17 CLKIN input Main clock input.
18 SCLK input Serial data clock input.
19 CS input Chip select input, active low.
20 DIN input Serial data input.

Key specifications

Parameter Value
Manufacturer TEXAS INSTRUMENTS
Package SOIC-20
Category Global Sourcing Parts
Pins 20

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input bias current IIB 0.65 0.9 µA AINxP = AINxN = HGND; Gain = 1, 2, or 4 8
Input bias current IIB -1 -0.65 µA AINxP = AINxN = HGND; Gain = 8 to 128 8
Input bias current drift TCIIB -1 0.35 1 nA/°C 8
Input offset current IIO -15 15 nA IIO = IIBP, IIBN 8
Offset error (input referred) EO -100 330 µV Channel 0,1, external short, TA = 25°C 8
Offset error (global-chop mode) EO -100 6 100 µV Global-chop mode, channel 0, 1, default global-chop delay, external short, TA = 25°C 8
Offset error (global-chop mode) EO -120 42 120 µV Global-chop mode, channel 2, default global-chop delay, external short, TA = 25°C 8
Offset error drift vs temperature TCEO -0.5 0.1 0.5 µV/°C Channel 0, 1, external short 8
Offset error drift vs temperature TCEO -0.5 0.2 0.5 µV/°C Channel 2, external short 8
Offset error drift vs temperature TCEO -0.3 0.1 0.3 µV/°C Global-chop mode channel 0, 1, external short 8
Gain error EG -0.2 0.025 0.2 % Channel 0, TA = 25°C, end-point fit 8
Gain error EG -1 0.1 1 % Channel 1, 2, TA = 25°C, end-point fit 8
Gain error drift vs temperature TCEG 8 25 ppm/°C Including internal reference error 8
Integral nonlinearity INL 6 ppm of FSR End-point fit 8
Supply voltage range VDVDD 3 3.3 5.5 V DVDD to GND 4
Absolute input voltage, gain 1, 2, or 4 VAINxP, VAINxN -1.3 2.7 V Gain = 1, 2, or 4; relative to HGND 4
Absolute input voltage, gain 8 to 128 VAINxP, VAINxN -1.3 0.9 V Gain = 8, 16, 32, 64, or 128; relative to HGND 4
Clock divider ratio NDIV 2 12 Signal at CLKIN divided by NDIV to generate modulator clock 4
Clock duty cycle 40 50 60 % External clock source at CLKIN 4
Operating ambient temperature TA -40 125 °C Operating ambient temperature 4
Power-supply voltage DVDD -0.3 6.5 V DVDD to DGND 4
Power-supply voltage DCDC_CAP -0.3 3.5 V DCDC_CAP to DGND 4
Analog input voltage AINxP, AINxN -1.6 2.7 V Relative to HGND 4
Digital input voltage CS, CLKIN, DIN, SCLK, SYNC/RESET -0.3 V Relative to DGND; maximum is DVDD + 0.3 V as printed 4
Input current, continuous, all pins except power-supply pins -10 10 mA Continuous 4
Junction temperature TJ 150 °C Junction 4
Storage temperature Tstg -60 150 °C Storage 4
Junction-to-ambient thermal resistance RθJA 68.5 °C/W DFM (SOIC) 20 pins 5
Junction-to-case (top) thermal resistance RθJC(top) 24.6 °C/W DFM (SOIC) 20 pins 5
Junction-to-board thermal resistance RθJB 53.7 °C/W DFM (SOIC) 20 pins 5
Junction-to-top characterization parameter ΨJT 17.1 °C/W DFM (SOIC) 20 pins 5
Junction-to-board characterization parameter ΨJB 50.9 °C/W DFM (SOIC) 20 pins 5
Common-mode rejection ratio CMRR 110 dB fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max 9
Total harmonic distortion THD -102 -94 dB fIN = 50 Hz or 60 Hz (up to 5 harmonics), VIN = -0.5 dBFS 9
Common-mode transient immunity CMTI 100 V/ns 9
Temperature measurement error -3 3 °C Internal temperature sensor, TA = 25°C, gain = 8 9
Temperature measurement error -5 5 °C Internal temperature sensor, across temperature, gain = 8 9
Logic input current IIN -1 1 µA DGND < VDigital Input < DVDD 9
Output load capacitance CLOAD 15 30 pF 9
Low-side supply current, high-resolution mode IDVDD 19.5 24 mA High-resolution mode 10
Low-side supply current, low-power mode IDVDD 16 21 mA Low-power mode, fCLKIN = 4.096 MHz 10
Standby supply current IDVDD 160 210 µA Standby mode, all channels disabled, no clock applied 10
High-side LDO output voltage, no load VHLDO_OUT 2.6 2.9 3.2 V HLDO_OUT to HGND, no external load, any channel enabled 10
High-side LDO output voltage, 1-mA load VHLDO_OUT 2.4 2.8 3.1 V HLDO_OUT to HGND, 1-mA external load on HLDO_OUT, any channel enabled 10
Pulse duration, CLKIN low tw(CLL) 49 ns 3.0 V ≤ DVDD ≤ 5.5 V 11
Pulse duration, CLKIN high tw(CLH) 49 ns 3.0 V ≤ DVDD ≤ 5.5 V 11
SCLK period tc(SC) 40 ns 3.0 V ≤ DVDD ≤ 5.5 V 11
Pulse duration, SCLK low tw(SCL) 20 ns 3.0 V ≤ DVDD ≤ 5.5 V 11
Pulse duration, SCLK high tw(SCH) 20 ns 3.0 V ≤ DVDD ≤ 5.5 V 11
Setup time, DIN valid before SCLK falling edge tsu(DI) 5 ns 3.0 V ≤ DVDD ≤ 5.5 V 11
Hold time, DIN valid after SCLK falling edge th(DI) 8 ns 3.0 V ≤ DVDD ≤ 5.5 V 11
Setup time, SYNC/RESET valid before CLKIN falling edge tsu(SY) 10 ns 3.0 V ≤ DVDD ≤ 5.5 V 11
Input bias current, supply-referenced single-ended impedance RIN 250 kΩ AINxN = HGND, gain = 1, 2, or 4 8
Single-ended input impedance RIN 0.5 MΩ AINxN = HGND, gain = 8 to 128 8
Differential input impedance ZIND 275 kΩ (AINxN + AINxP) / 2 = HGND, Gain = 1, 2, or 4 8
Differential input impedance ZIND 1 MΩ (AINxN + AINxP) / 2 = HGND, Gain = 8 to 128 8
Resolution 24 Bits 8
SPI start-up time 0.3 ms Measured from supplies at 90% to SPI interface ready to accept data 8
Converter start-up time 1 ms Measured from DCDC enable bit set to first DRDY falling edge with data settled to 0.1% (CLKIN running) 8
Input-referred noise EN 10 µVRMS 9
Dynamic range, gain = 1 DR 98 dB Gain = 1 9
Dynamic range, gain = 32, channel 0 DR 80 dB Gain = 32, channel 0 9
Crosstalk -120 dB From one channel to any other; fIN = 50 Hz or 60 Hz at AINxP while AINxN = HGND 9
Signal-to-noise ratio, gain = 1 SNR 98 dB fIN = 50 Hz or 60 Hz, gain = 1, VIN = -0.5 dBFS, normalized 9
Signal-to-noise ratio, gain = 32, channel 0 SNR 80 dB fIN = 50 Hz or 60 Hz, gain = 32, channel 0, VIN = -0.5 dBFS, normalized 9
Spurious-free dynamic range SFDR 105 dB fIN = 50 Hz or 60 Hz, VIN = -0.5 dBFS 9
Internal reference voltage VREF 1.2 V 9
Internal temperature sensor voltage 80.5 mV Internal temperature sensor, TA = 25°C, gain = 8 9
Internal temperature sensor temperature coefficient 265 µV/°C Internal temperature sensor, TA = 25°C, gain = 8 9
External temperature sensor input impedance 8 MΩ External temperature sensor, TA = 25°C, gain = 1, 2, or 4 9
Total unadjusted error TUE 0.3 % FSR External temperature sensor, TA = 25°C, gain = 1 9
Input capacitance CIN 1 pF 9
High-side GPO output impedance, driving 0 RGPO 100 Ω Driving 0 9
High-side GPO output impedance, driving 1 RGPO 115 Ω Driving 1 9
High-side GPO load current IGPO 1 mA 9
Power dissipation, high-resolution mode PD 64 mW High-resolution mode 10
Power dissipation, low-power mode PD 53 mW Low-power mode, fCLKIN = 4.096 MHz 10
Power dissipation, standby mode PD 525 µW Standby mode, all channels disabled, no clock applied 10
DC/DC output voltage VDCDC_OUT 3 V DCDC_OUT to HGND, all channels enabled, TA = 25°C 10
High-side supply current for auxiliary circuitry IH 1 mA Load connected from HLDO_OUT to HGND 10
Power-on-reset time tPOR 250 µs Measured from supplies at 90% 12
Register default acquisition time tREGACQ 5 µs 12

CAD (KiCad official)

  • Symbol: AMC131M03DFMR
  • Footprint: Package_SO:SOIC-20W_7.5x12.8mm_P1.27mm
  • 3D model: SOIC-20 (KiCad packages3D, STEP)
  • 3D model files: amc131m03dfmr-etched.step / amc131m03dfmr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); amc131m03dfmr.step / amc131m03dfmr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TEXAS INSTRUMENTS datasheet (100 pp, sha256 e6502c3649788095, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF