component
AMC1301QDWVRQ1
Public Made by Adomby adom
Texas Instruments Isolation Amplifiers, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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AMC1301QDWVRQ1
Texas Instruments · Isolation Amplifiers · SOIC-8
AMC1301QDWVRQ1 from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD1 | power_in | High-side power supply; see the Power Supply Recommendations section for power-supply decoupling recommendations. |
| 2 | INP | input | Noninverting analog input; either INP or INN must have a DC current path to GND1 to define the common-mode input voltage. |
| 3 | INN | input | Inverting analog input; either INP or INN must have a DC current path to GND1 to define the common-mode input voltage. |
| 4 | GND1 | power_in | High-side analog ground. |
| 5 | GND2 | power_in | Low-side analog ground. |
| 6 | OUTN | output | Inverting analog output. |
| 7 | OUTP | output | Noninverting analog output. |
| 8 | VDD2 | power_in | Low-side power supply; see the Power Supply Recommendations section for power-supply decoupling recommendations. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Signal Isolation Devices |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Power-supply voltage high-side VDD1 to GND1 | VDD1 | -0.3 | 7 | V | 5 | ||
| Power-supply voltage low-side VDD2 to GND2 | VDD2 | -0.3 | 7 | V | 5 | ||
| Input current continuous, any pin except power-supply pins | -10 | 10 | mA | Continuous, any pin except power-supply pins | 5 | ||
| Junction temperature | TJ | 150 | °C | 5 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 5 | ||
| High-side power supply VDD1 to GND1 | VDD1 | 3 | 5 | 5.5 | V | 5 | |
| Low-side power supply VDD2 to GND2 | VDD2 | 3 | 3.3 | 5.5 | V | 5 | |
| Clipping differential input voltage before clipping output | VClipping | -302.7 | 302.7 | mV | VIN = VINP, VINN | 5 | |
| Specified linear differential full-scale voltage | VFSR | -250 | 250 | mV | VIN = VINP, VINN | 5 | |
| Absolute common-mode input voltage | -2 | V | (VINP + VINN) / 2 to GND1 | 5 | |||
| Operating common-mode input voltage | VCM | -0.16 | V | (VINP + VINN) / 2 to GND1 | 5 | ||
| Specified ambient temperature | TA | -40 | 125 | °C | 5 | ||
| Input offset voltage | VOS | -0.2 | 0.05 | 0.2 | mV | Initial, at TA = 25°C, INP = INN = GND1 | 9 |
| Input offset drift | TCVOS | -3 | 1 | 3 | µV/°C | 9 | |
| Input bias current | IIB | -41 | -30 | -24 | µA | INP = INN = GND1; IIB = (IIBP + IIBN) / 2 | 9 |
| Gain error at TA = 25°C | EG | -0.3 | 0.05 | 0.3 | % | at TA = 25°C | 9 |
| Gain drift | TCEG | -50 | 15 | 50 | ppm/°C | 9 | |
| Nonlinearity | -0.03 | 0.01 | 0.03 | % | 9 | ||
| Nonlinearity drift | -1 | 1 | ppm/°C | 9 | |||
| Clipping differential output voltage | VCLIPout | -2.52 | 2.49 | 2.52 | V | VOUT = (VOUTP, VOUTN); /VIN/ = /VINP, VINN/ > /VClipping/ | 9 |
| Failsafe differential output voltage | VFailsafe | -2.563 | -2.545 | V | VCM ≥ VCMov, or VDD1 missing | 9 | |
| Output resistance | ROUT | 0.2 | Ω | On OUTP or OUTN | 9 | ||
| Common-mode output voltage | VCMout | 1.39 | 1.44 | 1.49 | V | 9 | |
| Power-supply current high-side | IDD1 | 6.3 | 8.5 | mA | 3.0 V ≤ VDD1 ≤ 3.6 V | 10 | |
| Power-supply current high-side | IDD1 | 7.2 | 9.8 | mA | 4.5 V ≤ VDD1 ≤ 5.5 V | 10 | |
| Power-supply current low-side | IDD2 | 5.3 | 7.2 | mA | 3.0 V ≤ VDD2 ≤ 3.6 V | 10 | |
| Power-supply current low-side | IDD2 | 5.9 | 8.1 | mA | 4.5 V ≤ VDD2 ≤ 5.5 V | 10 | |
| Junction-to-ambient thermal resistance | RθJA | 110.1 | °C/W | 6 | |||
| Junction-to-case (top) thermal resistance | RθJC(top) | 51.7 | °C/W | 6 | |||
| Junction-to-board thermal resistance | RθJB | 66.4 | °C/W | 6 | |||
| Junction-to-top characterization parameter | ΨJT | 16 | °C/W | 6 | |||
| Junction-to-board characterization parameter | ΨJB | 64.5 | °C/W | 6 |
CAD (KiCad official)
- Symbol:
AMC1301QDWVRQ1 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
amc1301qdwvrq1-etched.step/amc1301qdwvrq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);amc1301qdwvrq1.step/amc1301qdwvrq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (36 pp, sha256
8d0ccb947abb56e6, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).