component

AMC0336DWVR

Public Made by Adom

by adom

Texas Instruments , SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

markdown

AMC0336DWVR

Texas Instruments · IC · SOIC-8

AMC0336DWVR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 AVDD power_in High-side (analog) power supply, 3.0V to 5.5V recommended operating range with respect to AGND; see Power Supply Recommendations for decoupling.
2 INP input Noninverting analog input (±1V linear range with respect to SNSN); connect a 10nF filter capacitor from INP to SNSN.
3 SNSN input AGND sense pin and inverting input to the modulator; connect to AGND.
4 AGND power_in Analog (high-side) ground.
5 DGND power_in Digital (low-side) ground.
6 DOUT output Modulator data output bitstream, synchronized to the external clock.
7 CLKIN input Modulator clock input (5MHz to 11MHz) with internal pulldown resistor (typical value 1.5MΩ).
8 DVDD power_in Digital (low-side) power supply, 2.7V to 5.5V recommended operating range with respect to DGND; see Power Supply Recommendations for decoupling.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input resistance RIN 0.05 2.4 GΩ INP pin to AGND, SNSN = AGND 10
Input bias current IIB -10 3 10 nA INP pin, INP = AGND 10
Common-mode transient immunity CMTI 150 V/ns 10
Offset error EO -0.9 0.1 0.9 mV TA = 25°C, INP = AGND 10
Offset error temperature drift TCEO 3 6.5 µV/°C 10
Gain error EG -0.25 0.02 0.25 % Initial, at TA = 25°C, VINP = 1V or VINP = -1V 10
Gain error temperature drift TCEG -35 10 35 ppm/°C 10
Integral nonlinearity INL -6 1 6 LSB Resolution: 16 bits 10
Differential nonlinearity DNL -0.99 0.99 LSB Resolution: 16 bits 10
Signal-to-noise ratio SNR 84.5 89 dB VIN = 2VPP, fIN = 1kHz 10
Signal-to-noise + distortion SINAD 77 88 dB VIN = 2VPP, fIN = 1kHz 10
Total harmonic distortion THD -91 -80 dB VIN = 2VPP, fIN = 1kHz 10
Digital input current IIN 7 µA DGND ≤ VIN ≤ DVDD 10
Low-level input voltage VIL -0.3 V max is 0.3 x DVDD 10
Low-level output voltage VOL 0.4 V IOL = 4mA 10
High-side supply current IAVDD 5.3 7 mA 10
Low-side supply current IDVDD 3.6 5 mA CLOAD = 15pF 10
High-side undervoltage threshold, rising AVDDUV 2.4 2.6 2.8 V AVDD rising 10
High-side undervoltage threshold, falling AVDDUV 1.9 2.05 2.2 V AVDD falling 10
Low-side undervoltage threshold, rising DVDDUV 2.3 2.5 2.7 V DVDD rising 10
Low-side undervoltage threshold, falling DVDDUV 1.9 2.05 2.2 V DVDD falling 10
DOUT rise time (3.3V) tr 2.5 6 ns 10% to 90%, 2.7V ≤ DVDD ≤ 3.6V, CLOAD = 15pF 11
DOUT rise time (5V) tr 3.2 6 ns 10% to 90%, 4.5V ≤ DVDD ≤ 5.5V, CLOAD = 15pF 11
DOUT fall time (3.3V) tf 2.2 6 ns 10% to 90%, 2.7V ≤ DVDD ≤ 3.6V, CLOAD = 15pF 11
DOUT fall time (5V) tf 2.9 6 ns 10% to 90%, 4.5V ≤ DVDD ≤ 5.5V, CLOAD = 15pF 11
Device start-up time tSTART 30 µs AVDD step from 0 to 3.0V with DVDD ≥ 2.7V to bitstream valid, 0.1% settling 11
High-side power supply AVDD 3 5 5.5 V AVDD to AGND 4
Low-side power supply DVDD 2.7 3.3 5.5 V DVDD to DGND 4
Input voltage before clipping output VClipping -1.25 1.25 V VIN = VINP, VSNSN 4
Specified linear differential input voltage VFSR -1 1 V VIN = VINP, VSNSN 4
Input clock frequency fCLKIN 5 10 11 MHz 4
Input clock high time tHIGH 40 50 110 ns 4
Input clock low time tLOW 40 50 110 ns 4
Specified ambient temperature TA -40 125 °C 4
High-side power-supply voltage AVDD -0.3 6.5 V AVDD to AGND 4
Low-side power-supply voltage DVDD -0.3 6.5 V DVDD to DGND 4
Input current -10 10 mA Continuous, any pin except power-supply pins 4
Junction temperature TJ 150 °C 4
Storage temperature Tstg -65 150 °C 4
Junction-to-ambient thermal resistance RθJA 102.8 °C/W DWV (SOIC), 8 pins 5
Junction-to-case (top) thermal resistance RθJC(top) 45.1 °C/W DWV (SOIC), 8 pins 5
Junction-to-board thermal resistance RθJB 63 °C/W DWV (SOIC), 8 pins 5
Junction-to-top characterization parameter ΨJT 14.3 °C/W DWV (SOIC), 8 pins 5
Junction-to-board characterization parameter ΨJB 61.1 °C/W DWV (SOIC), 8 pins 5
Input capacitance (analog) CIN 2 pF fCLKIN = 10MHz 10
Input capacitance (digital) CIN 4 pF 10

CAD (KiCad official)

  • Symbol: AMC0336DWVR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: amc0336dwvr-etched.step / amc0336dwvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); amc0336dwvr.step / amc0336dwvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (44 pp, sha256 55949af4529f2820, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF