component
AM9435SA
Public Made by Adomby adom
Axelite Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AM9435SA
Axelite Tech · MOSFETs · SOP-8
AM9435SA from Axelite Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings. |
| 4 | G | input | Gate terminal of the P-channel enhancement-mode MOSFET; gate-source voltage is rated at ±20 V absolute maximum. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃). |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃). |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Axelite Tech |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (TJ=150℃) | ID | -5.2 | A | VGS=-10V | 2 | ||
| Pulsed Drain Current | IDM | -20 | A | 2 | |||
| Continuous Source Current (Diode Conduction) | IS | -2.4 | A | 2 | |||
| Operation Junction Temperature | TJ | -55 | 150 | ℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Power Dissipation | PD | 2.8 | W | TA=25℃ | 2 | ||
| Power Dissipation | PD | 1.8 | W | TA=70℃ | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250μA | 3 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250μA | 3 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | μA | VDS=-30V, VGS=0V, TJ=55℃ | 3 | ||
| On-State Drain Current | ID(ON) | -25 | A | VDS≦-5V, VGS≦-10V | 3 | ||
| Drain-source On-Resistance | RDS(ON) | 60 | mΩ | VGS=-10V, ID=-5.2A | 3 | ||
| Drain-source On-Resistance | RDS(ON) | 90 | mΩ | VGS=-4.5V, ID=-4.0A | 3 | ||
| Forward Transconductance | Gfs | 10 | S | VDS=-10V, ID=-5.2A | 3 | ||
| Diode Forward Current (Max.) | Is | 2.6 | A | 3 | |||
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS=-2.0A, VGS=0V | 3 | |
| Turn-On Delay Time | td(on) | 7 | 15 | nS | VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 | |
| Turn-On Rise Time | tr | 10 | 20 | nS | VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 | |
| Turn-Off Delay Time | td(off) | 40 | 80 | nS | VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 | |
| Turn-Off Fall Time | tf | 20 | 40 | nS | VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 | |
| Thermal Resistance-Junction to Ambient | RθJA | 70 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
AM9435SA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
am9435sa-etched.step/am9435sa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);am9435sa.step/am9435sa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Axelite Tech datasheet (6 pp, sha256
dbdf1745fe6731d4, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AM9435SA
**Axelite Tech** · MOSFETs · SOP-8
AM9435SA from Axelite Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings. |
| 4 | G | input | Gate terminal of the P-channel enhancement-mode MOSFET; gate-source voltage is rated at ±20 V absolute maximum. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃). |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃). |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Axelite Tech |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | | | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current (TJ=150℃) | ID | -5.2 | | | A | VGS=-10V | 2 |
| Pulsed Drain Current | IDM | -20 | | | A | | 2 |
| Continuous Source Current (Diode Conduction) | IS | -2.4 | | | A | | 2 |
| Operation Junction Temperature | TJ | -55 | | 150 | ℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Power Dissipation | PD | | | 2.8 | W | TA=25℃ | 2 |
| Power Dissipation | PD | | | 1.8 | W | TA=70℃ | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | VGS=0V, ID=-250μA | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250μA | 3 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-30V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | μA | VDS=-30V, VGS=0V, TJ=55℃ | 3 |
| On-State Drain Current | ID(ON) | -25 | | | A | VDS≦-5V, VGS≦-10V | 3 |
| Drain-source On-Resistance | RDS(ON) | | | 60 | mΩ | VGS=-10V, ID=-5.2A | 3 |
| Drain-source On-Resistance | RDS(ON) | | | 90 | mΩ | VGS=-4.5V, ID=-4.0A | 3 |
| Forward Transconductance | Gfs | 10 | | | S | VDS=-10V, ID=-5.2A | 3 |
| Diode Forward Current (Max.) | Is | | | 2.6 | A | | 3 |
| Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | IS=-2.0A, VGS=0V | 3 |
| Turn-On Delay Time | td(on) | | 7 | 15 | nS | VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 |
| Turn-On Rise Time | tr | | 10 | 20 | nS | VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 |
| Turn-Off Delay Time | td(off) | | 40 | 80 | nS | VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 |
| Turn-Off Fall Time | tf | | 20 | 40 | nS | VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 |
| Thermal Resistance-Junction to Ambient | RθJA | | 70 | | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `AM9435SA`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `am9435sa-etched.step` / `am9435sa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `am9435sa.step` / `am9435sa.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Axelite Tech datasheet](docs/am9435sa-datasheet.pdf) (6 pp, sha256 `dbdf1745fe6731d4`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/am9435sa-datasheet.pdf)