AM6921P-T1-PF-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	D1	passive	Drain of P-channel MOSFET 1; the datasheet limits drain-source voltage VDS to -30 V.
2	S1	passive	Source of P-channel MOSFET 1; continuous source (diode) current is limited to -1.0 A at 10 s and -0.70 A in steady state.
3	S1	passive	Source of P-channel MOSFET 1 (internally tied to pin 2); continuous source (diode) current is limited to -1.0 A at 10 s and -0.70 A in steady state.
4	G1	input	Gate of P-channel MOSFET 1; gate-source voltage is limited to ±20 V.
5	G2	input	Gate of P-channel MOSFET 2; gate-source voltage is limited to ±20 V.
6	S2	passive	Source of P-channel MOSFET 2 (internally tied to pin 7); continuous source (diode) current is limited to -1.0 A at 10 s and -0.70 A in steady state.
7	S2	passive	Source of P-channel MOSFET 2; continuous source (diode) current is limited to -1.0 A at 10 s and -0.70 A in steady state.
8	D2	passive	Drain of P-channel MOSFET 2; the datasheet limits drain-source voltage VDS to -30 V.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TSSOP-8
Category	Transistors/Thyristors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Gate Threshold Voltage	VGS(th)	-1		-3	V	VDS = VGS, ID = - 250 µA	2
Gate-Body Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			-1	µA	VDS = - 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current (TJ = 55 °C)	IDSS			-10	µA	VDS = - 30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	-15			A	VDS ≥ - 5 V, VGS = - 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.036	Ω	VGS = - 10 V, ID = - 4.7 A	2
Drain-Source On-State Resistance	RDS(on)			0.055	Ω	VGS = - 4.5 V, ID = - 3.8 A	2
Diode Forward Voltage	VSD		-0.74	-1.1	V	IS = - 1.0 A, VGS = 0 V	2
Total Gate Charge	Qg		13	20	nC	VDS = - 15 V, VGS = - 4.5 V, ID = - 4.7 A	2
Turn-On Delay Time	td(on)		13	20	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω	2
Rise Time	tr		14	22	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω	2
Turn-Off Delay Time	td(off)		52	80	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω	2
Fall Time	tf		26	40	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω	2
Source-Drain Reverse Recovery Time	trr		40	60	ns	IF = - 1.0 A, dI/dt = 100 A/µs	2
Forward Transconductance	gfs		14		S	VDS = - 15 V, ID = - 4.7 A	2
Gate-Source Charge	Qgs		3		nC	VDS = - 15 V, VGS = - 4.5 V, ID = - 4.7 A	2
Gate-Drain Charge	Qgd		5.8		nC	VDS = - 15 V, VGS = - 4.5 V, ID = - 4.7 A	2
Gate Resistance	Rg		4.6		Ω	f = 1.0 MHz	2
Drain-Source Voltage	VDS	-30			V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	TA = 25 °C	1
Continuous Drain Current (TJ = 150 °C)	ID	-5.2			A	TA = 25 °C, t ≤ 10 s	1
Continuous Drain Current (TJ = 150 °C)	ID	-4.1			A	TA = 25 °C, steady state	1
Continuous Drain Current (TJ = 150 °C)	ID	-4.2			A	TA = 70 °C, t ≤ 10 s	1
Continuous Drain Current (TJ = 150 °C)	ID	-3.6			A	TA = 70 °C, steady state	1
Pulsed Drain Current	IDM	-30			A	10 µs pulse width	1
Continuous Source Current (Diode Conduction)	IS	-1			A	TA = 25 °C, t ≤ 10 s	1
Continuous Source Current (Diode Conduction)	IS	-0.7			A	TA = 25 °C, steady state	1
Maximum Power Dissipation	PD			1.14	W	TA = 25 °C, t ≤ 10 s	1
Maximum Power Dissipation	PD			0.83	W	TA = 25 °C, steady state	1
Maximum Power Dissipation	PD			0.73	W	TA = 70 °C, t ≤ 10 s	1
Maximum Power Dissipation	PD			0.53	W	TA = 70 °C, steady state	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient	RthJA		86	110	°C/W	t ≤ 10 s	1
Maximum Junction-to-Ambient	RthJA		124	150	°C/W	steady state	1
Maximum Junction-to-Foot	RthJF		52	65	°C/W	steady state	1

CAD (KiCad official)

Symbol: AM6921P-T1-PF-VB
Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
3D model: TSSOP-8 (KiCad packages3D, STEP)
3D model files: am6921p-t1-pf-vb-etched.step / am6921p-t1-pf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); am6921p-t1-pf-vb.step / am6921p-t1-pf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 1f7488ff51fc6fee, retrieved 2026-11-05, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AM6921P-T1-PF-VB

Verified AM6921P-T1-PF-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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