component
AM4841P-T1-PF&30V-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AM4841P-T1-PF&30V-VB
VBsemi Elec · MOSFETs · SO-8
AM4841P-T1-PF&30V-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, carrying up to -5.8 A continuous drain current at TA = 25 °C on a 1" x 1" FR4 board. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage and -30 A pulsed drain current. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage and -30 A pulsed drain current. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage and -30 A pulsed drain current. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage and -30 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -5.8 | A | TA = 25 °C, 10 s | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -4.1 | A | TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -4.6 | A | TA = 70 °C, 10 s | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -3.2 | A | TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | -2.3 | A | 10 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -1.1 | A | steady state | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 40 | 50 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 70 | 95 | °C/W | steady state | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 24 | 30 | °C/W | steady state | 1 | |
| Gate Threshold Voltage | VGS(th) | -0.7 | -2 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1.1 | V | IS = - 2.3 A, VGS = 0 V | 2 | |
| Turn-On Delay Time | td(on) | 14 | 25 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 14 | 25 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 42 | 70 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 30 | 50 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 30 | 60 | ns | IF = - 1.2 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
AM4841P-T1-PF&30V-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
am4841p-t1-pf-30v-vb-etched.step/am4841p-t1-pf-30v-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);am4841p-t1-pf-30v-vb.step/am4841p-t1-pf-30v-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
08afd637babaf22f, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AM4841P-T1-PF&30V-VB
**VBsemi Elec** · MOSFETs · SO-8
AM4841P-T1-PF&30V-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, carrying up to -5.8 A continuous drain current at TA = 25 °C on a 1" x 1" FR4 board. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage and -30 A pulsed drain current. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage and -30 A pulsed drain current. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage and -30 A pulsed drain current. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, rated for a -30 V drain-source voltage and -30 A pulsed drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | -5.8 | A | TA = 25 °C, 10 s | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | -4.1 | A | TA = 25 °C, steady state | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | -4.6 | A | TA = 70 °C, 10 s | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | -3.2 | A | TA = 70 °C, steady state | 1 |
| Pulsed Drain Current | IDM | | | -30 | A | | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | -2.3 | A | 10 s | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | -1.1 | A | steady state | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TA = 25 °C, 10 s | 1 |
| Maximum Power Dissipation | PD | | | 1.3 | W | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TA = 70 °C, 10 s | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 40 | 50 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient | RthJA | | 70 | 95 | °C/W | steady state | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 24 | 30 | °C/W | steady state | 1 |
| Gate Threshold Voltage | VGS(th) | -0.7 | | -2 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Diode Forward Voltage | VSD | | -0.8 | -1.1 | V | IS = - 2.3 A, VGS = 0 V | 2 |
| Turn-On Delay Time | td(on) | | 14 | 25 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 |
| Rise Time | tr | | 14 | 25 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 42 | 70 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 |
| Fall Time | tf | | 30 | 50 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 |
| Source-Drain Reverse Recovery Time | trr | | 30 | 60 | ns | IF = - 1.2 A, dI/dt = 100 A/µs | 2 |
## CAD (KiCad official)
- Symbol: `AM4841P-T1-PF&30V-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `am4841p-t1-pf-30v-vb-etched.step` / `am4841p-t1-pf-30v-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `am4841p-t1-pf-30v-vb.step` / `am4841p-t1-pf-30v-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/am4841p-t1-pf-30v-vb-datasheet.pdf) (8 pp, sha256 `08afd637babaf22f`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/am4841p-t1-pf-30v-vb-datasheet.pdf)