component
AM4499P-T1-PF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAM4499P-T1-PF-VB
VBsemi Elec · MOSFETs · SO-8
AM4499P-T1-PF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -60 V with a gate-source voltage limit of ±20 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -60 V with a gate-source voltage limit of ±20 V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -60 V with a gate-source voltage limit of ±20 V. |
| 4 | G | input | Gate terminal of the P-channel MOSFET, with gate-source voltage limited to ±20 V and gate threshold of -1 V to -3 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, with continuous drain current of -10 A at TC = 25 °C and pulsed drain current of -50 A. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, with continuous drain current of -10 A at TC = 25 °C and pulsed drain current of -50 A. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, with continuous drain current of -10 A at TC = 25 °C and pulsed drain current of -50 A. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, with continuous drain current of -10 A at TC = 25 °C and pulsed drain current of -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current TC=25 °C | ID | -10 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current TC=70 °C | ID | -9 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current TA=25 °C | ID | 8 | A | TA = 25 °C, footnote b | 1 | ||
| Continuous Drain Current TA=70 °C | ID | -8 | A | TA = 70 °C, footnote b | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | 1 | |||
| Avalanche Current | IAS | -45 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 101 | mJ | 1 | |||
| Continuous Source-Drain Diode Current TA=25 °C | IS | 2.1 | A | TA = 25 °C, footnote b | 1 | ||
| Maximum Power Dissipation TC=25 °C | PD | 104.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation TC=70 °C | PD | 66.7 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation TA=25 °C | PD | 3.1 | W | TA = 25 °C, footnote b | 1 | ||
| Maximum Power Dissipation TA=70 °C | PD | 2 | W | TA = 70 °C, footnote b | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient Steady State | RthJA | 33 | 40 | °C/W | Steady State, footnote b | 1 | |
| Maximum Junction-to-Case Steady State | RthJC | 0.98 | 1.2 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| VDS Temperature Coefficient | VDS/TJ | 68 | mV/°C | ID = -250 µA | 2 | ||
| VGS(th) Temperature Coefficient | VGS(th)/TJ | -5.2 | mV/°C | 2 | |||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current TJ=55 °C | IDSS | -10 | µA | VDS = -60 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -12 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.025 | Ω | VGS = -10 V, ID = -5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.028 | Ω | VGS = -4.5 V, ID = -5 A | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS = -15 V, ID = -10 A | 2 | ||
| Input Capacitance | Ciss | 3500 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 390 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 290 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Total Gate Charge VGS=-10 V | Qg | 76 | 115 | nC | VDS = -30 V, VGS = -10 V, ID = -5 A | 2 | |
| Total Gate Charge VGS=-4.5 V | Qg | 38 | 60 | nC | VDS = -30 V, VGS = -4.5 V, ID = -55 A | 2 | |
| Gate-Source Charge | Qgs | 16 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 19 | nC | 2 | |||
| Gate Resistance | Rg | 5.2 | Ω | f = 1 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = -2 V, ID = -10 A, VGEN = -10 V | 2 | |
| Rise Time | tr | 7 | 15 | ns | VDD = -2 V, ID = -10 A, VGEN = -10 V | 2 | |
| Turn-Off Delay Time | td(off) | 70 | 110 | ns | VDD = -2 V, ID = -10 A, VGEN = -10 V | 2 | |
| Fall Time | tf | 40 | 60 | ns | VDD = -2 V, ID = -10 A, VGEN = -10 V | 2 | |
| Continuous Source-Drain Diode Current | IS | -9 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -15 | A | 2 | |||
| Body Diode Voltage | VSD | -1 | -1.5 | V | IS = -30 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 45 | 68 | ns | IF = -50 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 59 | 120 | nC | IF = -50 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Reverse Recovery Fall Time | ta | 29 | ns | 2 | |||
| Reverse Recovery Rise Time | tb | 16 | ns | 2 |
CAD (KiCad official)
- Symbol:
AM4499P-T1-PF-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
am4499p-t1-pf-vb-etched.step/am4499p-t1-pf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);am4499p-t1-pf-vb.step/am4499p-t1-pf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
dfb8b69ab8779031, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).