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AM40N08-30D-T1-PF-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AM40N08-30D-T1-PF-VB

VBsemi Elec · MOSFETs · TO-252

AM40N08-30D-T1-PF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V absolute maximum, with VGS(th) specified at VDS = VGS, ID = 250 µA.
2 D passive Drain (also the case/tab); drain-source voltage is rated 100 V with 40 A continuous drain current at TC = 25 °C and 120 A pulsed.
3 S passive Source; body-diode continuous source current is rated 40 A and pulsed 120 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VSS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS= 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS= 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 75 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.03 Ω VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance rDS(on) 0.067 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Forward Transconductance gfs 10 S VDS = 15 V, ID = 15 A 2
Total Gate Charge Qg 35 60 nC VDS = 50 V, VGS = 10 V, ID = 40 A 2
Turn-On Delay Time td(on) 11 20 ns VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 2
Rise Time tr 12 20 ns VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 2
Fall Time tf 12 20 ns VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 2
Forward Voltage VSD 1 1.5 V IF = 30 A, VGS = 0 V 2
Reverse Recovery Charge Qrr 0.15 0.4 µC IF = 30 A, di/dt = 100 A/µs 2
Drain-Source Voltage VDS 100 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 40 A TC = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID 23 A TC = 125 °C, TJ = 175 °C 1
Pulsed Drain Current IDM 120 A TC = 25 °C 1
Avalanche Current IAR 35 A TC = 25 °C 1
Repetitive Avalanche Energy EAR 61 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 107 W TC = 25 °C 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C, 1" square PCB 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB Mount) RthJA 40 °C/W 1" square PCB (FR-4) 1
Junction-to-Case (Drain) RthJC 1.4 °C/W 1
Input Capacitance Ciss 2600 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 290 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 120 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: AM40N08-30D-T1-PF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: am40n08-30d-t1-pf-vb-etched.step / am40n08-30d-t1-pf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); am40n08-30d-t1-pf-vb.step / am40n08-30d-t1-pf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 110c9cd341eaf003, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF