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AM2359PE-T1-PF-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoram2359pe-t1-pf-vbfactory-2.0.0extractor-text

Verified AM2359PE-T1-PF-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AM2359PE-T1-PF-VB · SOT-23(TO-236) · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 10-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-i_sctb6u/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ am2359pe-t1-pf-vb.kicad_sym✓ am2359pe-t1-pf-vb.kicad_mod✓ am2359pe-t1-pf-vb.step
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Ray Publish 0.1.0 e8eaf77 1d ago

AM2359PE-T1-PF-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

AM2359PE-T1-PF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet gives gate-source voltage VGS of ±20 V and specifies RDS(on) of 0.05 Ω at VGS = -10 V.
2 S passive Source terminal; the datasheet gives continuous source-drain diode current IS of 5.2 A and pulsed diode forward current ISM of 21 A.
3 D passive Drain terminal; the datasheet gives drain-source voltage VDS of -60 V and continuous drain current ID of -5.2 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5.2 A TC = 25 °C, VGS at -10 V 1
Continuous Drain Current ID -3.8 A TC = 100 °C 1
Pulsed Drain Current IDM -21 A 1
Linear Derating Factor 0.18 W/°C 1
Single Pulse Avalanche Energy EAS 120 mJ 1
Repetitive Avalanche Current IAR -5.2 A 1
Repetitive Avalanche Energy EAR 2.7 mJ 1
Maximum Power Dissipation PD 27 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt -4.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Maximum Junction-to-Ambient Thermal Resistance RthJA -65 °C/W 2
Maximum Junction-to-Case (Drain) Thermal Resistance RthJC -5.5 °C/W 2
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
VDS Temperature Coefficient ΔVDS/TJ 0.06 V/°C Reference to 25 °C, ID = -1 mA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 µA VDS = -48 V, VGS = 0 V, TJ = 150 °C 2
Forward Transconductance gfs 1.6 S VDS = -25 V, ID = -3.2 A 2
Continuous Source-Drain Diode Current IS 5.2 A 2
Pulsed Diode Forward Current ISM 21 A 2
Body Diode Voltage VSD 5.5 V TJ = 25 °C, IS = -5.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 80 160 ns TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 0.096 0.19 µC 2
Input Capacitance Ciss 270 pF VGS = 0 V, VDS = -25 V, f = 1.0 MHz 2
Output Capacitance Coss 170 pF VGS = 0 V, VDS = -25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 31 pF VGS = 0 V, VDS = -25 V, f = 1.0 MHz 2
Drain to Sink Capacitance C 12 pF f = 1.0 MHz 2
Total Gate Charge Qg -12 nC VGS = -10 V, ID = -4.7 A, VDS = -48 V 2
Gate-Source Charge Qgs -3.8 nC 2
Gate-Drain Charge Qgd -5.1 nC 2
Turn-On Delay Time td(on) 11 ns VDD = -30 V, ID = -4.7 A, RG = 24 Ω, RD = 4.0 Ω 2
Rise Time tr 63 ns VDD = -30 V, ID = -4.7 A, RG = 24 Ω, RD = 4.0 Ω 2
Fall Time tf 31 ns 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25 in) from package and center of die contact 2
Internal Source Inductance LS 7.5 nH 2

CAD (KiCad official)

  • Symbol: AM2359PE-T1-PF-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: am2359pe-t1-pf-vb-etched.step / am2359pe-t1-pf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); am2359pe-t1-pf-vb.step / am2359pe-t1-pf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 043d4280843b020c, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF