component

AM2359P-T1-PF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsam2359p-t1-pf-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 11d ago
viewers am2359p-t1-pf-vb: viewers · Ray 11d ago
am2359p-t1-pf-vb-etched.glb Publish 0.1.0 · Ray 11d ago
am2359p-t1-pf-vb-etched.step am2359p-t1-pf-vb: factory component page (tier=lcsc) · Ray 11d ago
am2359p-t1-pf-vb-hero.glb am2359p-t1-pf-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 11d ago
am2359p-t1-pf-vb-hero.overlay.json Publish 0.1.0 · Ray 11d ago
am2359p-t1-pf-vb.glb Publish 0.1.0 · Ray 11d ago
am2359p-t1-pf-vb.kicad_mod Publish 0.1.0 · Ray 11d ago
am2359p-t1-pf-vb.kicad_sym Publish 0.1.0 · Ray 11d ago
am2359p-t1-pf-vb.lbr Publish 0.1.0 · Ray 11d ago
am2359p-t1-pf-vb.step Publish 0.1.0 · Ray 11d ago
package.json Publish 0.1.0 · Ray 11d ago
page.json Set visibility: public · Ray 11d ago
README.md Publish 0.1.0 · Ray 11d ago

AM2359P-T1-PF-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

AM2359P-T1-PF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage limited to ±20 V with threshold of -1.0 to -2.5 V.
2 S passive Source of the P-channel MOSFET; continuous source-drain body diode current is -5.2 A.
3 D passive Drain of the P-channel MOSFET; drain-source voltage rated -60 V and continuous drain current -5.2 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID -5.2 A VGS at -10 V, TC = 25 °C 1
Continuous Drain Current ID -3.8 A VGS at -10 V, TC = 100 °C 1
Pulsed Drain Current IDM -21 A pulse width limited by max junction temperature 1
Single Pulse Avalanche Energy EAS 120 mJ VDD = -25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = -5.3 A 1
Repetitive Avalanche Current IAR -5.2 A 1
Repetitive Avalanche Energy EAR 2.7 mJ 1
Maximum Power Dissipation PD 27 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt -4.5 V/ns ISD ≤ -6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Peak Temperature 300 °C for 10 s, 1.6 mm from case 1
Linear Derating Factor 0.18 W/°C 1
Maximum Junction-to-Ambient RthJA -65 °C/W 2
Maximum Junction-to-Case (Drain) RthJC -5.5 °C/W 2
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -100 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -500 µA VDS = -48 V, VGS = 0 V, TJ = 150 °C 2
Forward Transconductance gfs 1.6 S VDS = -25 V, ID = -3.2 A 2
Body Diode Voltage VSD -5.5 V TJ = 25 °C, IS = -5.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 80 160 ns TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 0.096 0.19 µC TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs 2
Continuous Source-Drain Diode Current IS -5.2 A 2
Pulsed Diode Forward Current ISM -21 A 2
Drain-Source On-State Resistance RDS(on) 0.05 Ω VGS = -10 V, ID = -3.2 A 2
Input Capacitance Ciss 270 pF VGS = 0 V, VDS = -25 V, f = 1.0 MHz 2
Output Capacitance Coss 170 pF VGS = 0 V, VDS = -25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 31 pF VGS = 0 V, VDS = -25 V, f = 1.0 MHz 2
Gate-Source Charge Qgs -3.8 nC VGS = -10 V, ID = -4.7 A, VDS = -48 V 2
Gate-Drain Charge Qgd -5.1 nC VGS = -10 V, ID = -4.7 A, VDS = -48 V 2
Total Gate Charge Qg 12 nC VGS = -10 V 1

CAD (KiCad official)

  • Symbol: AM2359P-T1-PF-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: am2359p-t1-pf-vb-etched.step / am2359p-t1-pf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); am2359p-t1-pf-vb.step / am2359p-t1-pf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 a5275facc0bf981c, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF