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ALTAIR05T-800

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STMicroelectronics AC-DC Controllers And Regulators, SOIC-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ALTAIR05T-800

STMicroelectronics · AC-DC Controllers And Regulators · SOIC-16

ALTAIR05T-800 from STMicroelectronics, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SOURCE passive Power section source and PWM comparator input; MOSFET current is sensed via a resistor to GND and compared with an internal 0.75 V max reference, with 250 ns blanking, and a 1 V second level stops the IC until Vcc drops below 5 V.
2 SOURCE passive Power section source and PWM comparator input; MOSFET current is sensed via a resistor to GND and compared with an internal 0.75 V max reference, with 250 ns blanking, and a 1 V second level stops the IC until Vcc drops below 5 V.
3 Vcc power_in Supply voltage of the device, charged by the internal high-voltage start-up generator via an electrolytic capacitor to GND, with an optional 0.1 µF typ. bypass capacitor for a clean bias.
4 GND power_in Ground and current return for the signal part of the IC and the gate drive, kept separate from any pulsed current return.
5 IREF passive CC regulation loop reference voltage pin that needs an external capacitor to GND, used as the reference for the MOSFET peak drain current during CC regulation.
6 ZCD/FB bidirectional Transformer demagnetization sensing for quasi-resonant operation and output voltage monitor (error amplifier reference 2.5 V), with sunk/sourced current not to exceed ±2 mA (AMR) and no capacitor allowed to the auxiliary winding.
7 COMP output Output of the internal transconductance error amplifier, where the compensation network to GND is placed for voltage loop stability.
8 CDC output Cable drop compensation input that can sink current and provides a voltage below the 2.5 V internal reference proportional to DC load current via a resistor to ZCD/FB, left open if unused.
9 N.A. unconnected Not available; this pin must be left not connected.
10 N.A. unconnected Not available; this pin must be left not connected.
11 N.A. unconnected Not available; this pin must be left not connected.
12 N.C. unconnected Not internally connected; provision for clearance on the PCB to meet safety requirements.
13 DRAIN passive Drain of the internal 800 V power section, also sinking the high-voltage start-up generator current, connected to the internal metal frame for heat dissipation.
14 DRAIN passive Drain of the internal 800 V power section, also sinking the high-voltage start-up generator current, connected to the internal metal frame for heat dissipation.
15 DRAIN passive Drain of the internal 800 V power section, also sinking the high-voltage start-up generator current, connected to the internal metal frame for heat dissipation.
16 DRAIN passive Drain of the internal 800 V power section, also sinking the high-voltage start-up generator current, connected to the internal metal frame for heat dissipation.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SOIC-16
Category Power Management (PMIC)
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 800 V ID < 100 µA; Tj = 25 °C 7
Off-state drain current IDSS 80 µA VDS = 750 V; Tj = 125 °C 7
Drain-source ON-state resistance RDS(on) 11 14 Ω Id = 100 mA; Tj = 25 °C 7
Drain-source ON-state resistance RDS(on) 22 28 Ω Id = 100 mA; Tj = 125 °C 7
Min. drain start voltage VStart 40 50 60 V Icharge < 100 µA 7
Vcc startup charge current Icharge 4 5.5 7 mA VDRAIN > VStart; VCC < VCCOn; Tj = 25 °C 7
Vcc restart voltage (Vcc falling) VCCrestart 9.5 10.5 11.5 V Parameters tracking each other 7
Vcc restart voltage after protection tripping VCCrestart 5 V After protection tripping 7
Operating range Vcc 11.5 23 V After turn-on 7
Turn-on threshold VccOn 12 13 14 V Parameters tracking each other 7
Turn-off threshold VccOff 9 10 11 V Parameters tracking each other 7
Zener voltage VZ 23 25 27 V Icc = 20 mA 7
Start-up current Iccstart-up 200 300 µA See Figure 5 7
Quiescent current Iq 1 1.4 mA See Figure 6 7
Operating supply current @ 50 kHz Icc 1.4 1.7 mA See Figure 7 7
Fault quiescent current Iq(fault) 250 350 µA During hiccup and brownout 7
Start timer period TSTART 100 125 175 µs 7
Restart timer period during burst mode TRESTART 400 500 700 µs 7
ZCD input bias current IZCDb 0.1 1 µA VZCD = 0.1 to 3 V 7
ZCD upper clamp voltage VZCDH 3 3.3 3.6 V IZCD = 1 mA 7
ZCD lower clamp voltage VZCDL -90 -60 -30 mV IZCD = - 1 mA 7
ZCD arming voltage VZCDA 100 110 120 mV Positive-going edge 8
ZCD triggering voltage VZCDT 50 60 70 mV Negative-going edge 8
Min. source current during MOSFET ON-time IZCDON -25 -50 -75 µA 8
Trigger blanking time after MOSFET turn-off TBLANK 6 µs VCOMP ≥ 1.3 V 8
Trigger blanking time after MOSFET turn-off TBLANK 30 µs VCOMP = 0.9 V 8
Equivalent feedforward resistor RFF 45 Ω IZCD = 1mA 8
Voltage reference VREF 2.46 2.5 2.54 V Tj = 25°C; parameters tracking each other 8
Voltage reference VREF 2.42 2.58 V Tj = -40 to 125°C and Vcc = 12 V to 23 V 8
Transconductance gm 1.3 2.2 3.2 mS ∆ICOMP = ±10 µA VCOMP = 1.65 V 8
Voltage gain Gv 73 dB Open loop 8
Gain-bandwidth product GB 500 KHz 8
COMP source current ICOMP 70 µA VZCD = 2.3 V, VCOMP = 1.65 V 8
COMP sink current ICOMP 400 µA VZCD = 2.7 V, VCOMP = 1.65 V 8
Upper COMP voltage VCOMPH 2.7 V VZCD = 2.3 V 8
Lower COMP voltage VCOMPL 0.7 V VZCD = 2.7 V 8
Burst-mode threshold VCOMPBM 1 V 8
Burst-mode hysteresis Hys 65 mV 8
CDC voltage reference VCDC 2.4 2.5 2.6 V VCOMP = 1.1 V, ICDC = 1 µA 8
Maximum value of IREF voltage VIREFx 1.5 1.6 1.7 V VCOMP = VCOMPL 8
Current reference voltage VCREF 0.192 0.2 0.208 V 8
Leading-edge blanking tLEB 200 250 300 ns 8
Delay-to-output td(H-L) 300 ns 8
Max. clamp value VCSx 0.7 0.75 0.8 V dVcs/dt = 200 mV/µs 8
Hiccup-mode OCP level VCSdis 0.92 1 1.08 V 8
Drain-to-source voltage VDS -1 800 V Pins 1,2,13-16 6
Drain current ID 1 A Pins 1,2,13-16 6
Single pulse avalanche energy Eav 50 mJ Tj = 25 °C, ID = 1 A 6
Zero-current detector current IZCD/FB -2 2 mA Pin 6 6
Analog inputs and outputs -0.3 3.6 V Pins 7, 8 6
Maximum sunk current ICDC 200 µA Pin 8 6
Power dissipation Ptot 0.9 W TA = 50 °C 6
Junction temperature range Tj -40 150 °C 6
Storage temperature Tstg -55 150 °C 6
Thermal resistance, junction-to-pin Rth j-pin 10 °C/W 6
Thermal resistance, junction-to-ambient Rth j-amb 110 °C/W 6

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper Figure 2: Pin connection (top view) The copper area for heat dissipation has to be designed under the drain pins 4

CAD (KiCad official)

  • Symbol: ALTAIR05T-800
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16 (KiCad packages3D, STEP)
  • 3D model files: altair05t-800-etched.step / altair05t-800-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); altair05t-800.step / altair05t-800.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (27 pp, sha256 ae03774cada5f6b7, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF