component
ALJ13002
Public Made by Adomby adom
ALJ Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3h ago |
| viewers | 3h ago |
| alj13002-etched.glb | 3h ago |
| alj13002-etched.step | 3h ago |
| alj13002-hero.glb | 3h ago |
| alj13002-hero.overlay.json | 3h ago |
| alj13002.glb | 3h ago |
| alj13002.kicad_mod | 3h ago |
| alj13002.kicad_sym | 3h ago |
| alj13002.lbr | 3h ago |
| alj13002.step | 3h ago |
| package.json | 3h ago |
| page.json | 3h ago |
| README.md | 3h ago |
ALJ13002
ALJ · Bipolar (BJT) · TO-92
ALJ13002 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the NPN transistor; the datasheet gives VEBO = 6 V (max) and IC = 0.3 A continuous for the device. |
| 2 | Collector | passive | Collector terminal of the NPN transistor, rated for VCBO = 600 V and VCEO = 400 V, with 0.3 A continuous collector current and 0.9 W collector power dissipation. |
| 3 | Base | input | Base terminal of the NPN transistor used to drive the device in power switching applications; the datasheet specifies VEBO = 6 V (max) for the emitter-base junction. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALJ |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 600 | V | IC=100μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 400 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=100μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 100 | μA | VCB= 600V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | μA | VEB= 6V,IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 9 | 40 | VCE=10V, IC=200mA | 1 | ||
| DC current gain hFE(2) | hFE(2) | 5 | VCE=10V, IC=0.25mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=200mA,IB=40mA | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.1 | V | IC=200mA,IB=40mA | 1 | ||
| Transition frequency | fT | 5 | MHz | VCE=10V,IC=0.1A, f =1MHz | 1 | ||
| Fall time | tf | 0.5 | μs | IC=1A, IB1=-IB2=0.2A, VCC=100V | 1 | ||
| Storage time | ts | 2.5 | μs | 1 | |||
| Collector-base voltage | VCBO | 600 | V | Ta=25°C | 1 | ||
| Collector-emitter voltage | VCEO | 400 | V | Ta=25°C | 1 | ||
| Emitter-base voltage | VEBO | 6 | V | Ta=25°C | 1 | ||
| Collector current, continuous | IC | 0.3 | A | Ta=25°C | 1 | ||
| Collector power dissipation | PC | 0.9 | W | Ta=25°C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
ALJ13002 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
alj13002-etched.step/alj13002-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);alj13002.step/alj13002.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALJ datasheet (3 pp, sha256
e1a9d65fb73f2f87, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).