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AL5802-7

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Diodes Incorporated LED Drivers, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AL5802-7

Diodes Incorporated · LED Drivers · SOT-26

AL5802-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT output Open-collector LED driver output, rated for 0.8V to 30V with an absolute maximum output current of 150mA.
2 BIAS input Biases the open-collector output transistor; supply range is 4.5V to 30V and the absolute maximum BIAS voltage relative to GND is 30V.
3 EN input Enable pin for PWM dimming that provides access to the base of Q2 and the collector of Q1; absolute maximum voltage relative to GND is 6V.
4 GND power_in Ground reference point for setting the LED current.
5 FB passive Feedback pin that should be connected to pin 6 (REXT); absolute maximum LED voltage relative to GND is 6V.
6 REXT passive Current sense pin; the LED current sensing resistor connects from this pin to GND, with an absolute maximum voltage of 6V relative to GND.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category LED Drivers
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage range VBIAS 4.5 30 V 3
OUT voltage range VOUT 0.8 30 V 3
LED pin current ILED 10 120 mA Subject to ambient temperature, power dissipation and PCB (Note 8) 3
Operating ambient temperature range TA -40 125 °C 3
Output voltage relative to GND VOUT 30 V 2
BIAS voltage relative to GND VBIAS 30 V With pins 5 and 6 connected (Note 4) 2
LED voltage relative to GND VFB 6 V 2
EN voltage relative to GND VEN 6 V 2
REXT voltage relative to GND VREXT 6 V 2
Output current IOUT 150 mA 2
Operating junction temperature TJ -40 150 °C 2
Storage temperature TST -55 150 °C 2
Collector-Emitter Breakdown Voltage (Q1) V(BR)CEO 40 V IC = 1.0mA, IB = 0 3
Emitter-Base Breakdown Voltage (Q1) V(BR)EBO 6 V IE = 10µA, IC = 0 3
Collector Cutoff Current (Q1) ICEX 50 nA VCE = 30V, VEB(OFF) = 3.0V 3
Base Cutoff Current (Q1) IBL 50 nA VCE = 30V, VEB(OFF) = 3.0V 3
DC Current Gain (Q1) hFE 40 IC = 100µA, VCE = 1.0V 3
DC Current Gain (Q1) hFE 70 IC = 1.0mA, VCE = 1.0V 3
DC Current Gain (Q1) hFE 100 300 IC = 10mA, VCE = 1.0V 3
Collector-Emitter Saturation Voltage (Q1) VCE(SAT) 0.2 V IC = 10mA, IB = 1.0mA 3
Base-Emitter Saturation Voltage (Q1) VBE(SAT) 0.65 0.85 V IC = 10mA, IB = 1.0mA 3
Collector-Base Breakdown Voltage (Q2) V(BR)CBO 30 V IC = 50μA, IE = 0 3
Collector-Emitter Breakdown Voltage (Q2) V(BR)CEO 30 V IC = 1mA, IB = 0 3
Emitter-Base Breakdown Voltage (Q2) V(BR)EBO 5 V IE = 50μA, IC = 0 3
Collector Cut-Off Current (Q2) ICBO 0.5 µA VCB = 30V, IE = 0 3
Emitter Cut-Off Current (Q2) IEBO 0.5 µA VEB = 4V, IC = 0 3
Collector-Emitter Saturation Voltage (Q2) VCE(SAT) 0.3 V IC = 10mA, IB = 1mA 3
DC Current Gain (Q2) hFE 100 VCE = 5V, IC = 150mA 3
Input Resistance (Q2 pre-bias resistor R1) R1 7 10 13 kΩ 3
Power Dissipation @ TA = +25°C (Note 5) PD 0.37 W Device mounted on FR-4 PCB, 2oz, minimum recommended pad layout 3
Power Dissipation @ TA = +25°C (Note 6) PD 0.87 W Device mounted on 25mm x 25mm 2oz copper board 3
Power Dissipation @ TA = +25°C (Note 7) PD 1 W Device mounted on 50mm x 50mm 2oz copper board 3
Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 335 °C/W @ TA = +25°C; device mounted on FR-4 PCB, 2oz, minimum recommended pad layout 3
Thermal Resistance, Junction to Ambient Air (Note 6) RθJA 143 °C/W @ TA = +25°C; device mounted on 25mm x 25mm 2oz copper board 3
Thermal Resistance, Junction to Ambient Air (Note 7) RθJA 120 °C/W @ TA = +25°C; device mounted on 50mm x 50mm 2oz copper board 3

CAD (KiCad official)

  • Symbol: AL5802-7
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: al5802-7-etched.step / al5802-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); al5802-7.step / al5802-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (11 pp, sha256 760f1a741a3e741f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF