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AGMH70N90H

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGMH70N90H

AGM-Semi · MOSFETs · TO-263

AGMH70N90H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and a threshold of 2.0 V min to 4.0 V max at ID=250μA.
2 D passive Drain, also connected to the exposed tab; VDS rated 65 V with continuous drain current of 91 A at Tc=25℃ (package limited).
3 S passive Source; the body diode runs from source to drain, with a continuous current of 91 A and VSD of 1.2 V max at IS=20A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 65 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 91 A Tc=25℃ 1
Drain Current-Continuous ID 64 A Tc=100℃ 1
Maximum Power Dissipation PD 107 W Tc=25℃ 1
Maximum Power Dissipation PD 54 W Tc=100℃ 1
Avalanche energy EAS 441 mJ TJ=25℃,VDD=30V,Vgs=10V,ID=42A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 40 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 1.4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 65 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 4.3 6.5 mΩ VGS=10V, ID=40A 2
Source-Drain Current (Body Diode) ISD 91 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Forward Transconductance gFS 20 S VDS=5V,ID=20A 2
Input Capacitance Ciss 5624 pF VDS=30V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 303 pF VDS=30V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 237 pF VDS=30V,VGS=0V, F=1MHZ 2
Gate resistance Rg 0.9 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 30 nS VGS=10V,VDS=30V, RL=0.75Ω,RGEN=3.0Ω 2
Turn-on Rise Time tr 101 nS VGS=10V,VDS=30V, RL=0.75Ω,RGEN=3.0Ω 2
Turn-Off Delay Time td(off) 50 nS VGS=10V,VDS=30V, RL=0.75Ω,RGEN=3.0Ω 2
Turn-Off Fall Time tf 11 nS VGS=10V,VDS=30V, RL=0.75Ω,RGEN=3.0Ω 2
Total Gate Charge Qg 91 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Source Charge Qgs 26 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Drain Charge Qgd 26.2 nC VGS=10V, VDS=30V, ID=20A 2
Reverse Recovery Time trr 34 ns IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 40.3 nc IF=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGMH70N90H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: agmh70n90h-etched.step / agmh70n90h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agmh70n90h.step / agmh70n90h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 993accce7d67d881, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF