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Contents

README

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AGMH614H

AGM Semi · MOSFETs · TO-263

AGMH614H from AGM Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET control terminal. Threshold VGS(th)=2.0-4.0 V (typ 2.8 V); absolute maximum VGS=±20 V. Total gate charge Qg≈38 nC and internal gate resistance Rg≈1.6 Ω at VGS=0 V, VDS=0 V, f=1 MHz.
2 D passive Drain. Also electrically connected to the exposed tab (heat slug) of the TO-263 package. Drain-source breakdown voltage BVDSS=60 V; continuous ID=50 A at TC=25°C (33 A at TC=100°C); pulsed IDM=200 A. Body-diode cathode.
3 S passive Source. MOSFET current return and body-diode anode. RDS(on) typ 11 mΩ (max 15 mΩ) at VGS=10 V, ID=20 A. Body-diode forward voltage VSD≤1.2 V at IS=20 A, VGS=0 V.
TAB D passive Exposed thermal/electrical tab, internally connected to the Drain (pin 2). Provides the primary heat-sinking path to the PCB copper pour; RθJC=1.9 °C/W.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package TO-263
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AGMH614H

CAD (KiCad official)

  • Symbol: AGMH614H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: agmh614h-etched.step / agmh614h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agmh614h.step / agmh614h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (None pp, sha256 59ae8f8227de156c, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF