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AGMH6080H

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGMH6080H

AGM-Semi · MOSFETs · TO-263

AGMH6080H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of 2.0 V min to 4.0 V max at ID=250 µA.
2 D passive Drain (middle lead, also connected to the exposed tab); VDS rated 60 V and continuous drain current 66 A at Tc=25 °C (package limited).
3 S passive Source; current return of the N-channel MOSFET, with body-diode continuous current up to 66 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 66 A Tc=25℃ (Note 1) 1
Drain Current-Continuous ID 47 A Tc=100℃ 1
Maximum Power Dissipation PD 94 w Tc=25℃ 1
Maximum Power Dissipation PD 47 w Tc=100℃ 1
Avalanche energy EAS 225 mJ TJ=25℃,VDD=30V,Vgs=10V,ID=30A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 40 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 1.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 6.2 8 mΩ VGS=10V, ID=20A 2
Source-Drain Current (Body Diode) ISD 66 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=15A 2
Forward Transconductance gFS 25 S VDS=5V,ID=10A 2
Input Capacitance Ciss 2710 pF VDS=30V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 203 pF VDS=30V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 176 pF VDS=30V,VGS=0V, F=1MHZ 2
Gate resistance Rg 1.7 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 17.9 nS VGS=10V,VDS=30V, RL=0.75Ω,RGEN=3.3Ω 2
Turn-on Rise Time tr 10.8 nS VGS=10V,VDS=30V, RL=0.75Ω,RGEN=3.3Ω 2
Turn-Off Delay Time td(off) 42.4 nS VGS=10V,VDS=30V, RL=0.75Ω,RGEN=3.3Ω 2
Turn-Off Fall Time tf 10.4 nS VGS=10V,VDS=30V, RL=0.75Ω,RGEN=3.3Ω 2
Total Gate Charge Qg 55.6 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Source Charge Qgs 11.6 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Drain Charge Qgd 6 nC VGS=10V, VDS=30V, ID=20A 2
Reverse Recovery Time trr 36 ns Is=15A , dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 44.6 nc Is=15A , dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AGMH6080H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: agmh6080h-etched.step / agmh6080h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agmh6080h.step / agmh6080h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 a8bf546c4f5036e6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF