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AGMH6018C

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGMH6018C

AGM-Semi · MOSFETs · TO-220

AGMH6018C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with absolute maximum VGS of ±20 V and threshold VGS(th) of 2.0 to 4.0 V at ID=250 µA.
2 D passive Drain (also connected to the tab); VDS rated 60 V, continuous current 150 A at Tc=25℃ (package limited), pulsed 600 A.
3 S passive Source; body diode continuous current up to 150 A with forward voltage max 1.2 V at ISD=20 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V, TA=25℃ 1
Continuous Drain Current ID 150 A Tc=25℃ (package limited) 1
Continuous Drain Current ID 102 A Tc=100℃ 1
Pulsed Drain Current IDM 600 A TA=25℃ 1
Maximum Power Dissipation PD 260 W Tc=25℃ 1
Maximum Power Dissipation PD 104 W Tc=100℃ 1
Avalanche Energy EAS 705 mJ TJ=25℃,VDD=30V,Vgs=10V,ID=84A, L=0.2mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.48 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 1.9 2.6 mΩ VGS=10V, ID=20A 2
Source-Drain Current (Body Diode) ISD 150 A 2
Forward on Voltage VSD 1.2 V VGS=0V,ISD=20A 2
Forward Transconductance gFS 24 S VDS=5V,ID=10A 2
Input Capacitance Ciss 4525 pF VDS=30V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 1769 pF VDS=30V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 90 pF VDS=30V,VGS=0V, F=1MHZ 2
Gate resistance Rg 1.8 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 22.5 nS VDD=30V, VGS=10V, RGEN=2Ω 2
Turn-on Rise Time tr 6.7 nS VDD=30V, VGS=10V, RGEN=2Ω 2
Turn-Off Delay Time td(off) 80 nS VDD=30V, VGS=10V, RGEN=2Ω 2
Turn-Off Fall Time tf 27 nS VDD=30V, VGS=10V, RGEN=2Ω 2
Total Gate Charge Qg 65 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Source Charge Qgs 12 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Drain Charge Qgd 9.8 nC VGS=10V, VDS=30V, ID=20A 2

CAD (KiCad official)

  • Symbol: AGMH6018C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agmh6018c-etched.step / agmh6018c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agmh6018c.step / agmh6018c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 f45451b5ccf60b30, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF