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AGMH18N20C

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGMH18N20C

AGM-Semi · MOSFETs · TO-220

AGMH18N20C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold 2.0 to 4.0 V at VDS=VGS, ID=250μA.
2 D passive Drain (also connected to the tab); drain-source voltage rated 200 V, continuous current 18 A at Tc=25℃.
3 S passive Source; body diode source-drain current up to 18 A, forward voltage max 1.4 V at IS=9A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V,VGS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 0.12 0.15 Ω VGS=10V, ID=9A 2
Source-Drain Current (Body Diode) ISD 18 A 2
Forward on Voltage VSD 1.4 V VGS=0V,IS=9A 2
Gate-Body Leakage Current IGSS 10 nA VGS=±20V,VDS=0V 2
Forward Transconductance gFS 8 S VDS=10V,ID=5A 2
Input Capacitance Ciss 1054 pF VDS=25V,VGS=0V,F=1MHZ 2
Output Capacitance Coss 121 pF VDS=25V,VGS=0V,F=1MHZ 2
Reverse Transfer Capacitance Crss 10 pF VDS=25V,VGS=0V,F=1MHZ 2
Gate resistance Rg 1.9 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 38.5 nS VGS=25V,VDS=100V ID=18A,RGEN=25Ω 2
Turn-on Rise Time tr 47 nS VGS=25V,VDS=100V ID=18A,RGEN=25Ω 2
Turn-Off Delay Time td(off) 245 nS VGS=25V,VDS=100V ID=18A,RGEN=25Ω 2
Turn-Off Fall Time tf 70 nS VGS=25V,VDS=100V ID=18A,RGEN=25Ω 2
Total Gate Charge Qg 56 nC VGS=10V, VDS=160V, ID=18A 2
Gate-Source Charge Qgs 6 nC VGS=10V, VDS=160V, ID=18A 2
Gate-Drain Charge Qgd 30 nC VGS=10V, VDS=160V, ID=18A 2
Reverse Recovery Time trr 182 ns IS=9A , dI/dt=500A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 1.27 nc IS=9A , dI/dt=500A/µs , TJ=25℃ 2
Drain-Source Voltage VDS 200 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 18 A Tc=25℃ 1
Drain Current-Continuous ID 11 A Tc=100℃ 1
Drain Current-Pulsed IDM 72 A 1
Maximum Power Dissipation PD 158 w Tc=25℃ 1
Maximum Power Dissipation PD 63 w Tc=100℃ 1
Avalanche energy EAS 180 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.79 ℃/W 1

CAD (KiCad official)

  • Symbol: AGMH18N20C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agmh18n20c-etched.step / agmh18n20c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agmh18n20c.step / agmh18n20c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 fe461e1e95482e0d, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF