component
AGMH12N10D
Public Made by Adomby adom
AGM Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGMH12N10D
AGM Semi · MOSFETs · TO-252
AGMH12N10D from AGM Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V with threshold VGS(th) of 2.5 V min to 4.0 V max at ID=250μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage is 100 V max and continuous drain current is 65 A at Tc=25℃ (package limited). |
| 3 | S | passive | Source; body diode continuous source current is 65 A and forward voltage is 1.2 V max at IS=10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V; printed as ±20 | 1 | |
| Drain Current-Continuous | ID | 65 | A | Tc=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 39 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM (pluse) | 260 | A | Note 2 | 1 | ||
| Maximum Power Dissipation | PD | 96 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 38 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 250 | mJ | Note 3 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State (Note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.3 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V; printed as ±100 | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 9.6 | 13 | mΩ | VGS=10V, ID=20A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 65 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 |
CAD (KiCad official)
- Symbol:
AGMH12N10D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
agmh12n10d-etched.step/agmh12n10d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agmh12n10d.step/agmh12n10d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (10 pp, sha256
5226825bb6a81e56, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).