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AGMH056N08C

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGMH056N08C

AGM-Semi · MOSFETs · TO-220

AGMH056N08C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with absolute maximum VGS of ±20 V and threshold VGS(th) of 2.1 V min to 4.0 V max at 250 µA.
2 D passive Drain (also the tab); drain-source voltage rated 85 V, continuous drain current 142 A at Tc=25℃ (package limited).
3 S passive Source; body diode continuous current up to 142 A with forward voltage max 1.2 V at IS=20 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 85 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 142 A Tc=25℃ (Note 1) 1
Drain Current-Continuous ID 101 A Tc=100℃ 1
Drain Current-Pulsed IDM 568 A Note 2 1
Maximum Power Dissipation PD 218 w Tc=25℃ 1
Maximum Power Dissipation PD 110 w Tc=100℃ 1
Avalanche energy EAS 361 mJ Note 3 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.68 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 85 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=85V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2.1 2.7 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 5 6.5 mΩ VGS=10V, ID=20A 2
Source-Drain Current (Body Diode) ISD 142 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Forward Transconductance gFS 27 S VDS=5V,ID=20A 2
Input Capacitance Ciss 1973 pF VDS=40V,VGS=0V,F=1MHZ 2
Output Capacitance Coss 795 pF VDS=40V,VGS=0V,F=1MHZ 2
Reverse Transfer Capacitance Crss 25 pF VDS=40V,VGS=0V,F=1MHZ 2
Gate resistance Rg 0.8 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 15 nS VGS=10V,VDS=40V,ID=40A,RGEN=3Ω 2
Turn-on Rise Time tr 52 nS VGS=10V,VDS=40V,ID=40A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 38 nS VGS=10V,VDS=40V,ID=40A,RGEN=3Ω 2
Turn-Off Fall Time tf 24 nS VGS=10V,VDS=40V,ID=40A,RGEN=3Ω 2
Total Gate Charge Qg 57 nC VGS=40V, VDS=10V, ID=40A 2
Gate-Source Charge Qgs 19 nC VGS=40V, VDS=10V, ID=40A 2
Gate-Drain Charge Qgd 14 nC VGS=40V, VDS=10V, ID=40A 2
Reverse Recovery Time trr 52 ns Is=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 65 nc Is=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGMH056N08C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agmh056n08c-etched.step / agmh056n08c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agmh056n08c.step / agmh056n08c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 12bdb17b360ea6da, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF