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AGMH035N10C

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGMH035N10C

AGM-Semi · MOSFETs · TO-220

AGMH035N10C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) of 2.5 V min to 3.5 V max at ID=250μA.
2 D passive Drain, connected to the tab; VDS rated 100 V, continuous ID 150 A (package limited) at Tc=25℃, pulsed 600 A.
3 S passive Source; body-diode continuous current ISD up to 150 A, with RDS(on) of 3.6 mΩ typ (4.25 mΩ max) at VGS=10V, ID=30A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 3.6 4.25 mΩ VGS=10V, ID=30A 2
Source-Drain Current (Body Diode) ISD 150 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Drain-Source Voltage VDS 100 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 150 A Tc=25℃, package limited 1
Drain Current-Continuous ID 105 A Tc=100℃ 1
Drain Current-Pulsed IDM 600 A Note 2 1
Maximum Power Dissipation PD 208 w Tc=25℃ 1
Maximum Power Dissipation PD 84 w Tc=100℃ 1
Avalanche energy EAS 600 mJ TJ=25℃,VDD=50V,Vgs=10V,ID=49A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 60 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.6 ℃/W 1
Forward Transconductance gFS 36 S VDS=5V,ID=20A 2
Input Capacitance Ciss 3950 pF VDS=50V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 1200 pF VDS=50V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 27 pF VDS=50V,VGS=0V, F=1MHZ 2
Gate resistance Rg 0.77 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 25 nS VGS=10V,VDS=50V, ID=75A,RGEN=5Ω 2
Turn-on Rise Time tr 33 nS VGS=10V,VDS=50V, ID=75A,RGEN=5Ω 2
Turn-Off Delay Time td(off) 95 nS VGS=10V,VDS=50V, ID=75A,RGEN=5Ω 2
Turn-Off Fall Time tf 75 nS VGS=10V,VDS=50V, ID=75A,RGEN=5Ω 2
Total Gate Charge Qg 67.2 nC VGS=10V, VDS=50V, ID=75A 2
Gate-Source Charge Qgs 16.9 nC VGS=10V, VDS=50V, ID=75A 2
Gate-Drain Charge Qgd 16.9 nC VGS=10V, VDS=50V, ID=75A 2
Reverse Recovery Time trr 82 ns IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 180 nc IF=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGMH035N10C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agmh035n10c-etched.step / agmh035n10c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agmh035n10c.step / agmh035n10c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 9cce84b699fa8337, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF