component
AGMH022P10H
Public Made by Adomby adom
AGM-Semi MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGMH022P10H
AGM-Semi · MOSFETs · TO-263
AGMH022P10H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V (VDS=0V) with a threshold of -2 to -4 V at ID=-250µA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage is limited to -100 V and continuous drain current to -65 A at Tc=25℃ (package limited). |
| 3 | S | passive | Source; body-diode source-drain current is rated up to -65 A with a forward voltage of at most -1.2 V at IS=-10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | -65 | A | Tc=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | -41 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM (pluse) | -260 | A | Note 2 | 1 | ||
| Maximum Power Dissipation | PD | 250 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 100 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 676 | mJ | Note 3 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 62 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 0.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -2 | -3 | -4 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 15 | 24 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -65 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-10A | 2 |
CAD (KiCad official)
- Symbol:
AGMH022P10H - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
agmh022p10h-etched.step/agmh022p10h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agmh022p10h.step/agmh022p10h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (10 pp, sha256
cbb82f7d9ccb8cf7, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).