# AGMH022N10H

**AGM-Semi** · MOSFETs · TO-263

AGMH022N10H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; absolute maximum gate-source voltage is ±20 V and the threshold voltage VGS(th) is 2.5 V min to 4.5 V max at ID=250µA. |
| 2 | D | passive | Drain, connected to the tab; drain-source voltage is rated 100 V and continuous drain current is 220 A at Tc=25℃ (package limited). |
| 3 | S | passive | Source; the body diode source-drain current is rated up to 220 A, with a forward voltage of 1.2 V max at IS=20A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `AGMH022N10H`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `agmh022n10h-etched.step` / `agmh022n10h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agmh022n10h.step` / `agmh022n10h.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM-Semi datasheet](docs/agmh022n10h-datasheet.pdf) (7 pp, sha256 `bf0e399bf37422ce`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agmh022n10h-datasheet.pdf)