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AGM665E

Public Made by Adom

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AGM-Semi MOSFETs, SOT23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM665E

AGM-Semi · MOSFETs · SOT23-3

AGM665E from AGM-Semi, in a SOT23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, threshold VGS(th) 1.2 V min to 2.2 V max at ID=250μA.
2 S passive Source; continuous drain current is 3.0 A at Ta=25℃ and body diode continuous current ISD is 3.0 A max.
3 D passive Drain; drain-source voltage is rated 60 V, with pulsed drain current of 12 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOT23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 3 A Ta=25℃ 1
Drain Current-Continuous ID 1.9 A Ta=100℃ 1
Drain Current-Pulsed IDM 12 A 1
Maximum Power Dissipation PD 1.25 w Ta=25℃ 1
Maximum Power Dissipation PD 0.5 w Ta=100℃ 1
Avalanche energy EAS 25 mJ TJ=25℃,VDD=30V,Vgs=10V,ID=10A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 100 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.3 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 60 80 mΩ VGS=10V, ID=3A 2
Drain-Source On-State Resistance RDS(on) 70 95 mΩ VGS=4.5V, ID=2A 2
Source-Drain Current (Body Diode) ISD 3 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=3A 2
Forward Transconductance gFS 5 S VDS=5V,ID=2A 2
Input Capacitance Ciss 400 pF VDS=30V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 28 pF VDS=30V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 23 pF VDS=30V,VGS=0V, F=1MHZ 2
Gate resistance Rg 2.8 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 4.5 nS VGS=10V,VDS=30V, ID=3A,RGEN=2.3Ω 2
Turn-on Rise Time tr 10 nS VGS=10V,VDS=30V, ID=3A,RGEN=2.3Ω 2
Turn-Off Delay Time td(off) 12.5 nS VGS=10V,VDS=30V, ID=3A,RGEN=2.3Ω 2
Turn-Off Fall Time tf 1.5 nS VGS=10V,VDS=30V, ID=3A,RGEN=2.3Ω 2
Total Gate Charge Qg 8.8 nC VGS=10V, VDS=30V, ID=3A 2
Gate-Source Charge Qgs 1 nC VGS=10V, VDS=30V, ID=3A 2
Gate-Drain Charge Qgd 2.5 nC VGS=10V, VDS=30V, ID=3A 2
Reverse Recovery Time trr 24 ns IF=3A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 12 nc IF=3A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM665E
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT23-3 (KiCad packages3D, STEP)
  • 3D model files: agm665e-etched.step / agm665e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm665e.step / agm665e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 5a5999b740e3d720, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF