component
AGM628M
Public Made by Adomby adom
AGM Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 15d ago |
| viewers | 15d ago |
| agm628m-etched.glb | 15d ago |
| agm628m-etched.step | 15d ago |
| agm628m-hero.glb | 15d ago |
| agm628m-hero.overlay.json | 15d ago |
| agm628m.glb | 15d ago |
| agm628m.kicad_mod | 15d ago |
| agm628m.kicad_sym | 15d ago |
| agm628m.lbr | 15d ago |
| agm628m.step | 15d ago |
| package.json | 15d ago |
| page.json | 15d ago |
| README.md | 15d ago |
AGM628M
AGM Semi · MOSFETs · SOP-8
AGM628M from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1 marked on the top view); the datasheet lists VDS ratings of 60V (N-Ch) and -60V (P-Ch) for the two channels. |
| 2 | G1 | input | Gate of MOSFET 1, with a maximum gate-source voltage of ±20V. |
| 3 | S2 | passive | Source of MOSFET 2. |
| 4 | G2 | input | Gate of MOSFET 2, with a maximum gate-source voltage of ±20V. |
| 5 | D2 | passive | Drain of MOSFET 2, shorted to pin 6 in the package. |
| 6 | D2 | passive | Drain of MOSFET 2, shorted to pin 5 in the package. |
| 7 | D1 | passive | Drain of MOSFET 1, shorted to pin 8 in the package. |
| 8 | D1 | passive | Drain of MOSFET 1, shorted to pin 7 in the package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 60 | V | VGS=0V | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -60 | V | VGS=0V | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous (N-Ch) | ID | 6.8 | A | TA=25℃ (Note 1: package limited) | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -5.7 | A | TA=25℃ (Note 1: package limited) | 1 | ||
| Drain Current-Continuous (N-Ch) | ID | 4.1 | A | TA=100℃ | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -3.4 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed (N-Ch) | IDM | 7 | A | Note 2: repetitive, pulse width limited by max junction temperature | 1 | ||
| Drain Current-Pulsed (P-Ch) | IDM | -23 | A | Note 2: repetitive, pulse width limited by max junction temperature | 1 | ||
| Total Power Dissipation (N-Ch) | PD | 2.5 | W | TA=25℃ | 1 | ||
| Total Power Dissipation (P-Ch) | PD | 2.5 | W | TA=25℃ | 1 | ||
| Avalanche Energy (N-Ch) | EAS | 56 | mJ | Note 3: TJ=25℃,VDD=30V,Vgs=10V,ID=15A, L=0.5mH,RG=25ohm | 1 | ||
| Avalanche Energy (P-Ch) | EAS | 56 | mJ | Note 3: TJ=25℃,VDD=-30V,Vgs=-10V,ID=15A, L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State (Note 1) | 1 | ||
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 30 | 38 | mΩ | VGS=10V, ID=6A | 2 | |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 36 | 48 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Source-Drain Current (Body Diode) (N-Ch) | ISD | 6.8 | A | 2 | |||
| Forward on Voltage (N-Ch) | VSD | 1.2 | V | VGS=0V,IS=6A | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -60 | V | VGS=0V ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | μA | VDS=-60V,VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 53 | 67 | mΩ | VGS=-10V, ID=-5A | 3 | |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 67 | 85 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| Source-Drain Current (Body Diode) (P-Ch) | ISD | -5.7 | A | 3 | |||
| Forward on Voltage (P-Ch) | VSD | -1.2 | V | VGS=0V, IS=-5A | 3 |
CAD (KiCad official)
- Symbol:
AGM628M - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm628m-etched.step/agm628m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm628m.step/agm628m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (10 pp, sha256
e719159de34b6140, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).