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AGM615MN

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM615MN

AGM-Semi · MOSFETs · SOP-8

AGM615MN from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (Pin 1 marked on the top view of the SOP8 package).
2 G1 input Gate of MOSFET 1, with a VGS rating of ±20V and a threshold of 1.2V to 2.2V.
3 S2 passive Source of MOSFET 2.
4 G2 input Gate of MOSFET 2, with a VGS rating of ±20V and a threshold of 1.2V to 2.2V.
5 D2 passive Drain of MOSFET 2, with a VDS rating of 60V.
6 D2 passive Drain of MOSFET 2, with a VDS rating of 60V (tied to pin 5).
7 D1 passive Drain of MOSFET 1, with a VDS rating of 60V.
8 D1 passive Drain of MOSFET 1, with a VDS rating of 60V (tied to pin 7).

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 14 18 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance RDS(on) 18 26 mΩ VGS=4.5V, ID=6A 2
Source-Drain Current (Body Diode) ISD 8.8 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=10A 2
Drain-Source Voltage VDS 60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 8.8 A Ta=25℃ 1
Drain Current-Continuous ID 5.8 A Ta=100℃ 1
Maximum Power Dissipation PD 2.5 W Ta=25℃ 1
Maximum Power Dissipation PD 1 W Ta=100℃ 1
Avalanche energy EAS 37 mJ TJ=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Forward Transconductance gFS 10 S VDS=5V,ID=6A 2
Input Capacitance Ciss 1500 pF VDS=30V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 112 pF VDS=30V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 98 pF VDS=30V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 7 nS VGS=10V,VDS=30V, ID=12A,RGEN=4.5Ω 2
Turn-on Rise Time tr 5.4 nS VGS=10V,VDS=30V, ID=12A,RGEN=4.5Ω 2
Turn-Off Delay Time td(off) 29 nS VGS=10V,VDS=30V, ID=12A,RGEN=4.5Ω 2
Turn-Off Fall Time tf 4.5 nS VGS=10V,VDS=30V, ID=12A,RGEN=4.5Ω 2
Total Gate Charge Qg 38 nC VGS=10V, VDS=30V, ID=12A 2
Gate-Source Charge Qgs 10 nC VGS=10V, VDS=30V, ID=12A 2

CAD (KiCad official)

  • Symbol: AGM615MN
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm615mn-etched.step / agm615mn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm615mn.step / agm615mn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 a45efcd8ecbe6090, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF