component
AGM614MN
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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AGM614MN
AGM-Semi · MOSFETs · SOP-8
AGM614MN from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1 marked by the dot on the package); the datasheet states VDS 60V and ID 17A for the device. |
| 2 | G1 | input | Gate of MOSFET 1, rated at ±20V gate-source with a threshold of 1.2V min to 2.2V max at 250µA. |
| 3 | S2 | passive | Source of MOSFET 2; the datasheet states VDS 60V and ID 17A for the device. |
| 4 | G2 | input | Gate of MOSFET 2, rated at ±20V gate-source with a threshold of 1.2V min to 2.2V max at 250µA. |
| 5 | D2 | passive | Drain of MOSFET 2, rated at 60V drain-source breakdown and 17A continuous (package limited); tied internally with pin 6. |
| 6 | D2 | passive | Drain of MOSFET 2, rated at 60V drain-source breakdown and 17A continuous (package limited); tied internally with pin 5. |
| 7 | D1 | passive | Drain of MOSFET 1, rated at 60V drain-source breakdown and 17A continuous (package limited); tied internally with pin 8. |
| 8 | D1 | passive | Drain of MOSFET 1, rated at 60V drain-source breakdown and 17A continuous (package limited); tied internally with pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | VGS=0V, TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V, TA=25℃ | 1 | |
| Drain Current-Continuous (Tc=25℃) | ID | 17 | A | Tc=25℃, package limited | 1 | ||
| Drain Current-Continuous (Tc=100℃) | ID | 10 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 68 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation (Tc=25℃) | PD | 6.3 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation (Tc=100℃) | PD | 2.5 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 72 | mJ | TJ=25℃, VDD=30V, Vgs=10V, ID=17A, L=0.5mH, RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 60 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(on) | 14.5 | 17.5 | mΩ | VGS=10V, ID=10A | 2 | |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(on) | 20 | 25.5 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 17 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,ISD=10A | 2 | ||
| Forward Transconductance | gFS | 5 | S | VDS=5V,ID=6A | 2 | ||
| Input Capacitance | Ciss | 657 | pF | VDS=30V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 227 | pF | VDS=30V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 13 | pF | VDS=30V,VGS=0V, F=1MHZ | 2 | ||
| Gate resistance | Rg | 2.5 | Ω | VGS=0V, VDS=0V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 6 | nS | VDD=30V, RD=5Ω, RG=10Ω, VGS=10V | 2 | ||
| Turn-on Rise Time | tr | 14 | nS | VDD=30V, RD=5Ω, RG=10Ω, VGS=10V | 2 | ||
| Turn-Off Delay Time | td(off) | 12 | nS | VDD=30V, RD=5Ω, RG=10Ω, VGS=10V | 2 | ||
| Turn-Off Fall Time | tf | 3 | nS | VDD=30V, RD=5Ω, RG=10Ω, VGS=10V | 2 | ||
| Total Gate Charge | Qg | 13.2 | nC | VGS=10V, VDD=30V, ID=10A | 2 | ||
| Gate-Source Charge | Qgs | 1.87 | nC | VGS=10V, VDD=30V, ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 3.33 | nC | VGS=10V, VDD=30V, ID=10A | 2 |
CAD (KiCad official)
- Symbol:
AGM614MN - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm614mn-etched.step/agm614mn-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm614mn.step/agm614mn.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (7 pp, sha256
03b82165b373c1a0, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).