component
AGM612S
Public Made by Adomby adom
AGM Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM612S
AGM Semi · MOSFETs · SOP-8
AGM612S from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 4 | G | input | Gate terminal, with a maximum gate-source voltage of ±20 V and a threshold of 1.2 to 2.2 V. |
| 5 | D | passive | Drain terminal, one of four drain pins (5-8) tied together, rated 60 V drain-source and 11 A continuous at TA=25°C. |
| 6 | D | passive | Drain terminal, one of four drain pins (5-8) tied together, rated 60 V drain-source and 11 A continuous at TA=25°C. |
| 7 | D | passive | Drain terminal, one of four drain pins (5-8) tied together, rated 60 V drain-source and 11 A continuous at TA=25°C. |
| 8 | D | passive | Drain terminal, one of four drain pins (5-8) tied together, rated 60 V drain-source and 11 A continuous at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 11 | 16 | mΩ | VGS=10V, ID=10A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 18 | 24 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 11 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 11 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 6 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 4 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.5 | w | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | w | TA=100℃ | 1 | ||
| Avalanche energy | EAS | 90 | mJ | Note 3: TJ=25℃,VDD=30V,Vgs=10V,ID=19A, L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
AGM612S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm612s-etched.step/agm612s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm612s.step/agm612s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (8 pp, sha256
b8ded3b76f37dd2d, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).