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AGM612MN

Public Made by Adom

by adom

AGM Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM612MN

AGM Semi · MOSFETs · SOP-8

AGM612MN from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (pin 1 marked on top view).
2 G1 input Gate of MOSFET 1; VGS rated ±20 V.
3 S2 passive Source of MOSFET 2.
4 G2 input Gate of MOSFET 2; VGS rated ±20 V.
5 D2 passive Drain of MOSFET 2; VDS rated 60 V.
6 D2 passive Drain of MOSFET 2; VDS rated 60 V.
7 D1 passive Drain of MOSFET 1; VDS rated 60 V.
8 D1 passive Drain of MOSFET 1; VDS rated 60 V.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 11 A Ta=25℃ (Note 1) 1
Drain Current-Continuous ID 6.6 A Ta=100℃ 1
Drain Current-Pulsed IDM 4 A Note 2: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 2.5 w Ta=25℃ 1
Maximum Power Dissipation PD 1 w Ta=100℃ 1
Avalanche energy EAS 100 mJ Note 3: TJ=25℃,VDD=30V,Vgs=10V,ID=20A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.2 V VDS=VGS,ID=250μA 2
Forward Transconductance gFS 10 S VDS=5V,ID=5A 2
Drain-Source On-State Resistance RDS(on) 13 17 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance RDS(on) 18 22 mΩ VGS=4.5V, ID=5A 2
Source-Drain Current (Body Diode) ISD 11 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=5A 2
Input Capacitance Ciss 700 pF VDS=30V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 340 pF VDS=30V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 28 pF VDS=30V,VGS=0V, F=1MHZ 2
Gate resistance Rg 1.7 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 6.2 nS VGS=10V,VDS=30V, ID=12A,RGEN=4.5Ω 2
Turn-on Rise Time tr 2.3 nS VGS=10V,VDS=30V, ID=12A,RGEN=4.5Ω 2
Turn-Off Delay Time td(off) 23 nS VGS=10V,VDS=30V, ID=12A,RGEN=4.5Ω 2
Turn-Off Fall Time tf 17 nS VGS=10V,VDS=30V, ID=12A,RGEN=4.5Ω 2
Total Gate Charge Qg 15 nC VGS=10V, VDS=30V, ID=12A 2
Gate-Source Charge Qgs 3.6 nC VGS=10V, VDS=30V, ID=12A 2
Gate-Drain Charge Qgd 3.1 nC VGS=10V, VDS=30V, ID=12A 2
Reverse Recovery Time trr 32 ns IF=5A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 11 nc IF=5A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM612MN
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm612mn-etched.step / agm612mn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm612mn.step / agm612mn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (8 pp, sha256 459bd32fbddd4b70, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF