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AGM610MN

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM610MN

AGM-Semi · MOSFETs · SOP-8

AGM610MN from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (pin 1 marked by the dot on the package top).
2 G1 input Gate of MOSFET 1, with a maximum gate-source voltage of ±20 V.
3 S2 passive Source of MOSFET 2.
4 G2 input Gate of MOSFET 2, with a maximum gate-source voltage of ±20 V.
5 D2 passive Drain of MOSFET 2, with a maximum drain-source voltage of 60 V.
6 D2 passive Drain of MOSFET 2, with a maximum drain-source voltage of 60 V.
7 D1 passive Drain of MOSFET 1, with a maximum drain-source voltage of 60 V.
8 D1 passive Drain of MOSFET 1, with a maximum drain-source voltage of 60 V.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 12 15 mΩ VGS=10V, ID=15A 2
Drain-Source On-State Resistance RDS(on) 15 19 mΩ VGS=4.5V, ID=10A 2
Source-Drain Current (Body Diode) ISD 12 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=15A 2
Drain-Source Voltage VDS 60 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 12 A Ta=25℃ 1
Drain Current-Continuous ID 8 A Ta=100℃ 1
Drain Current-Pulsed IDM 48 A Note 2 1
Maximum Power Dissipation PD 2.5 w Ta=25℃ 1
Maximum Power Dissipation PD 1 w Ta=100℃ 1
Avalanche energy EAS 90 mJ Note 3 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Forward Transconductance gFS 13 S VDS=5V,ID=10A 2
Input Capacitance Ciss 1770 pF VDS=30V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 582 pF VDS=30V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 37 pF VDS=30V,VGS=0V, F=1MHZ 2
Gate resistance Rg 5.2 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 14 nS VGS=10V,VDS=30V, RGEN=10Ω 2
Turn-on Rise Time tr 10 nS VGS=10V,VDS=30V, RGEN=10Ω 2
Turn-Off Delay Time td(off) 46 nS VGS=10V,VDS=30V, RGEN=10Ω 2
Turn-Off Fall Time tf 8 nS VGS=10V,VDS=30V, RGEN=10Ω 2
Total Gate Charge Qg 31 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Source Charge Qgs 4.5 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Drain Charge Qgd 8.8 nC VGS=10V, VDS=30V, ID=20A 2
Reverse Recovery Time trr 41 ns IF=15A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 36 nc IF=15A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM610MN
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm610mn-etched.step / agm610mn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm610mn.step / agm610mn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 7b9e839c6d6f73ac, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF