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AGM60P20D

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM60P20D

AGM-Semi · MOSFETs · TO-252

AGM60P20D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.2 V min, -1.7 V typ and -2.2 V max at ID=-250μA.
2 D passive Drain (also the exposed tab); drain-source voltage is -60 V max, with continuous drain current of -18 A at Tc=25℃ (package limited).
3 S passive Source; body-diode continuous current is -18 A max, with forward voltage of -1.2 V max at IS=-10A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -18 A Tc=25℃ 1
Drain Current-Continuous ID -11 A Tc=100℃ 1
Maximum Power Dissipation PD 32 w Tc=25℃ 1
Maximum Power Dissipation PD 12.8 w Tc=100℃ 1
Avalanche energy EAS 49 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 3.9 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.7 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 57 80 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-State Resistance RDS(on) 65 95 mΩ VGS=-4.5V, ID=-5A 2
Source-Drain Current (Body Diode) ISD -18 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-10A 2
Forward Transconductance gFS 9 S VDS=-5V,ID=-5A 2
Input Capacitance Ciss 525 pF VDS=-30V,VGS=0V,F=1MHZ 2
Output Capacitance Coss 80 pF VDS=-30V,VGS=0V,F=1MHZ 2
Reverse Transfer Capacitance Crss 3.9 pF VDS=-30V,VGS=0V,F=1MHZ 2
Gate resistance Rg 3.5 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 10 nS VGS=-10V,VDS=-30V, ID=-5A,RGEN=3Ω 2
Turn-on Rise Time tr 6 nS VGS=-10V,VDS=-30V, ID=-5A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 40 nS VGS=-10V,VDS=-30V, ID=-5A,RGEN=3Ω 2
Turn-Off Fall Time tf 13 nS VGS=-10V,VDS=-30V, ID=-5A,RGEN=3Ω 2
Total Gate Charge Qg 8.5 nC VGS=-10V, VDS=-30V, ID=-5A 2
Gate-Source Charge Qgs 1.8 nC VGS=-10V, VDS=-30V, ID=-5A 2
Gate-Drain Charge Qgd 1.5 nC VGS=-10V, VDS=-30V, ID=-5A 2
Reverse Recovery Time trr 50 ns Isd=-10A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 105 nc Isd=-10A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM60P20D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm60p20d-etched.step / agm60p20d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm60p20d.step / agm60p20d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 f04c5caa2a1392ee, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF