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AGM60P06S

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM60P06S

AGM-Semi · MOSFETs · SOP-8

AGM60P06S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; pin 1 is marked on the package top view.
2 S passive Source of the P-channel MOSFET, connected in parallel with the other source pins.
3 S passive Source of the P-channel MOSFET, connected in parallel with the other source pins.
4 G input Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a threshold of -1.2 to -2.2 V.
5 D passive Drain of the P-channel MOSFET, rated -60 V drain-source and -5.7 A continuous.
6 D passive Drain of the P-channel MOSFET, rated -60 V drain-source and -5.7 A continuous.
7 D passive Drain of the P-channel MOSFET, rated -60 V drain-source and -5.7 A continuous.
8 D passive Drain of the P-channel MOSFET, rated -60 V drain-source and -5.7 A continuous.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -5.7 A TA=25℃ (Note 1) 1
Drain Current-Continuous ID -2.6 A TA=100℃ 1
Maximum Power Dissipation PD 2.5 w TA=25℃ 1
Maximum Power Dissipation PD 1 w TA=100℃ 1
Avalanche energy EAS 72 mJ Note 3: TJ=25℃, VDD=-30V, Vgs=-10V, ID=17A, L=0.5mH, RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.7 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 48 60 mΩ VGS=-10V, ID=-3A 2
Drain-Source On-State Resistance RDS(on) 67 88 mΩ VGS=-4.5V, ID=-2A 2
Source-Drain Current (Body Diode) ISD -5.7 A 2
Forward on Voltage VSD -0.8 -1.2 V VGS=0V,IS=-3A 2

CAD (KiCad official)

  • Symbol: AGM60P06S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm60p06s-etched.step / agm60p06s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm60p06s.step / agm60p06s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 4785eb6d5618a4ec, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF