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AGM609S

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AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM609S

AGM-Semi · MOSFETs · SOP-8

AGM609S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, pin 1 side, shared with pins 2 and 3; the VDS rating is 60 V.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3 for the 14 A continuous drain current rating.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2; gate-source voltage limit is ±20 V.
4 G input Gate of the N-channel MOSFET with an absolute maximum of ±20 V to source and a typical threshold of 1.6 V (1.2 V to 2.2 V at 250 µA).
5 D passive Drain of the MOSFET, shared with pins 6, 7 and 8; the VDS rating is 60 V and RDS(on) is 7.2 mΩ typical at VGS=10 V.
6 D passive Drain of the MOSFET, tied with pins 5, 7 and 8 for the 14 A continuous current rating (56 A pulsed).
7 D passive Drain of the MOSFET, tied with pins 5, 6 and 8; the VDS rating is 60 V.
8 D passive Drain of the MOSFET, tied with pins 5, 6 and 7; the VDS rating is 60 V.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 7.2 12 mΩ VGS=10V, ID=12A 2
Drain-Source On-State Resistance RDS(on) 9.5 15 mΩ VGS=4.5V, ID=8A 2
Source-Drain Current (Body Diode) ISD 14 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=10A 2
Reverse Recovery Time trr 32 ns IF=10A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 46 nc IF=10A , dI/dt=100A/µs , TJ=25℃ 2
Drain-Source Voltage VDS 60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 14 A TA=25℃ 1
Drain Current-Continuous ID 12 A TA=100℃ 1
Maximum Power Dissipation PD 2.5 w TA=25℃ 1
Maximum Power Dissipation PD 1 w TA=100℃ 1
Avalanche energy EAS 156 mJ TJ=25℃,VDD=30V,Vgs=10V,ID=25A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Forward Transconductance gFS 14 S VDS=5V,ID=8A 2
Gate resistance Rg 1.7 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 11 nS VGS=15V,VDS=30V, RL=0.75Ω,RGEN=3.3Ω 2
Turn-on Rise Time tr 50 nS VGS=15V,VDS=30V, RL=0.75Ω,RGEN=3.3Ω 2
Turn-Off Delay Time td(off) 56 nS VGS=15V,VDS=30V, RL=0.75Ω,RGEN=3.3Ω 2
Turn-Off Fall Time tf 12 nS VGS=15V,VDS=30V, RL=0.75Ω,RGEN=3.3Ω 2
Total Gate Charge Qg 23 nC VGS=10V, VDS=30V, ID=12A 2

CAD (KiCad official)

  • Symbol: AGM609S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm609s-etched.step / agm609s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm609s.step / agm609s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 40fb517845c15fe2, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF