component
AGM609C
Public Made by Adomby adom
AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM609C
AGM-Semi · MOSFETs · TO-220
AGM609C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.2 V min to 2.2 V max at 250 µA. |
| 2 | D | passive | Drain, also connected to the metal tab; drain-source voltage rated 60 V and continuous current 80 A (package limited) at Tc=25℃. |
| 3 | S | passive | Source; body diode continuous current up to 80 A with forward voltage max 1.2 V at IS=20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 80 | A | Tc=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 48 | A | Tc=100℃ | 1 | ||
| Maximum Power Dissipation | PD | 62.5 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 25 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 169 | mJ | Note 3 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 60 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 6.3 | 8.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 8 | 12.5 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Turn-on Delay Time | td(on) | 7.5 | nS | VGS=10V,VDS=30V, RL=1.5Ω,RGEN=3Ω | 2 | ||
| Gate-Source Charge | Qgs | 7 | nC | VGS=10V, VDS=30V, ID=30A | 2 | ||
| Source-Drain Current (Body Diode) | ISD | 80 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 |
CAD (KiCad official)
- Symbol:
AGM609C - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
agm609c-etched.step/agm609c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm609c.step/agm609c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
47bc087ca2a750c5, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).