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AGM603C

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM603C

AGM-Semi · MOSFETs · TO-220

AGM603C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 1.2 to 2.2 V at ID=250 µA.
2 D passive Drain (also connected to the tab); drain-source voltage rated 60 V and continuous current 130 A at Tc=25℃ (package limited).
3 S passive Source; body diode source-drain current up to 130 A, RDS(on) 3.0 mΩ typ at VGS=10 V, ID=20 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 130 A Tc=25℃, package limited 1
Drain Current-Continuous ID 78 A Tc=100℃ 1
Maximum Power Dissipation PD 140 W Tc=25℃ 1
Maximum Power Dissipation PD 56 W Tc=100℃ 1
Avalanche energy EAS 441 mJ TJ=25℃,VDD=30V,Vgs=10V,ID=42A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.89 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 3 3.8 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(on) 3.5 5.7 mΩ VGS=4.5V, ID=10A 2
Source-Drain Current (Body Diode) ISD 130 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Forward Transconductance gFS 5 S VDS=5V,ID=10A 2
Input Capacitance Ciss 3716 pF VDS=25V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 883 pF VDS=25V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 35 pF VDS=25V,VGS=0V, F=1MHZ 2
Gate resistance Rg 1.5 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 22.5 nS VGS=10V,VDS=30V, ID=25A,RGEN=2Ω 2
Turn-on Rise Time tr 6.7 nS VGS=10V,VDS=30V, ID=25A,RGEN=2Ω 2
Turn-Off Delay Time td(off) 80.3 nS VGS=10V,VDS=30V, ID=25A,RGEN=2Ω 2
Turn-Off Fall Time tf 26.8 nS VGS=10V,VDS=30V, ID=25A,RGEN=2Ω 2
Total Gate Charge Qg 66.1 nC VGS=10V, VDS=30V, ID=25A 2
Gate-Source Charge Qgs 10.7 nC VGS=10V, VDS=30V, ID=25A 2
Gate-Drain Charge Qgd 10.9 nC VGS=10V, VDS=30V, ID=25A 2
Reverse Recovery Time trr 68.3 ns IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 73 nc IF=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM603C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agm603c-etched.step / agm603c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm603c.step / agm603c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 15149bd76e373e36, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF