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AGM602C

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AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM602C

AGM-Semi · MOSFETs · TO-220

AGM602C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of 2.0 V min to 4.0 V max at ID=250μA.
2 D passive Drain (also connected to the mounting tab); drain-source voltage rating is 60 V with 210 A continuous current (package limited) at Tc=25℃.
3 S passive Source; carries up to 210 A continuous (package limited) and body diode current ISD of 210 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 210 A Tc=25℃ (package limited) 1
Drain Current-Continuous ID 150 A Tc=100℃ 1
Maximum Power Dissipation PD 224 W Tc=25℃ 1
Maximum Power Dissipation PD 112 W Tc=100℃ 1
Avalanche energy EAS 756 mJ TJ=25℃,VDD=30V,Vgs=10V,ID=55A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 52 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.67 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 66 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 2.7 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 2.3 3.2 mΩ VGS=10V, ID=20A 2
Source-Drain Current (Body Diode) ISD 210 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Forward Transconductance gFS 60 S VDS=5V,ID=10A 2
Input Capacitance Ciss 4700 pF VDS=30V,VGS=0V,F=1MHZ 2
Output Capacitance Coss 927 pF VDS=30V,VGS=0V,F=1MHZ 2
Reverse Transfer Capacitance Crss 42 pF VDS=30V,VGS=0V,F=1MHZ 2
Gate resistance Rg 1.7 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 7 nS VGS=10V,VDS=30V, RL=1Ω,RGEN=3Ω 2
Turn-on Rise Time tr 12.3 nS VGS=10V,VDS=30V, RL=1Ω,RGEN=3Ω 2
Turn-Off Delay Time td(off) 24.6 nS VGS=10V,VDS=30V, RL=1Ω,RGEN=3Ω 2
Turn-Off Fall Time tf 5.2 nS VGS=10V,VDS=30V, RL=1Ω,RGEN=3Ω 2
Total Gate Charge Qg 93 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Source Charge Qgs 24 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Drain Charge Qgd 11.5 nC VGS=10V, VDS=30V, ID=20A 2
Reverse Recovery Time trr 57 ns IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 82 nc IF=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM602C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agm602c-etched.step / agm602c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm602c.step / agm602c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 4acfc37808ccd390, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF