component
AGM55P10S
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM55P10S
AGM-Semi · MOSFETs · SOP-8
AGM55P10S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, shorted to pins 2 and 3 externally. |
| 2 | S | passive | Source of the P-channel MOSFET, shorted to pins 1 and 3 externally. |
| 3 | S | passive | Source of the P-channel MOSFET, shorted to pins 1 and 2 externally. |
| 4 | G | input | Gate, with gate-source voltage limit of ±20 V and threshold of -1.2 to -2.2 V. |
| 5 | D | passive | Drain, rated for -100 V drain-source and -12 A continuous current, common with pins 6-8. |
| 6 | D | passive | Drain, rated for -100 V drain-source and -12 A continuous current, common with pins 5, 7 and 8. |
| 7 | D | passive | Drain, rated for -100 V drain-source and -12 A continuous current, common with pins 5, 6 and 8. |
| 8 | D | passive | Drain, rated for -100 V drain-source and -12 A continuous current, common with pins 5-7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | -12 | A | Tc=25℃ | 1 | ||
| Drain Current-Continuous | ID | -8 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | -48 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.5 | W | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 195 | mJ | TJ=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.8 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 65 | 70 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 71 | 75 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -12 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-10A | 2 | ||
| Forward Transconductance | gFS | 13 | S | VDS=-5V,ID=-5A | 2 | ||
| Input Capacitance | Ciss | 4507 | pF | VDS=-50V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 97 | pF | VDS=-50V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 15 | pF | VDS=-50V,VGS=0V, F=1MHZ | 2 | ||
| Turn-on Delay Time | td(on) | 49 | nS | VGS=-10V,VDS=-50V, ID=-10A,RGEN=4.5Ω | 2 | ||
| Turn-on Rise Time | tr | 71 | nS | VGS=-10V,VDS=-50V, ID=-10A,RGEN=4.5Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 555 | nS | VGS=-10V,VDS=-50V, ID=-10A,RGEN=4.5Ω | 2 | ||
| Turn-Off Fall Time | tf | 187 | nS | VGS=-10V,VDS=-50V, ID=-10A,RGEN=4.5Ω | 2 | ||
| Total Gate Charge | Qg | 773 | nC | VGS=-10V, VDS=-50V, ID=-10A | 2 | ||
| Gate-Source Charge | Qgs | 17 | nC | VGS=-10V, VDS=-50V, ID=-10A | 2 | ||
| Gate-Drain Charge | Qgd | 9.1 | nC | VGS=-10V, VDS=-50V, ID=-10A | 2 | ||
| Reverse Recovery Time | trr | 32 | ns | Isd=-10A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 49 | nc | Isd=-10A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AGM55P10S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm55p10s-etched.step/agm55p10s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm55p10s.step/agm55p10s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
c0d3518ee31aa7d7, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM55P10S
**AGM-Semi** · MOSFETs · SOP-8
AGM55P10S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, shorted to pins 2 and 3 externally. |
| 2 | S | passive | Source of the P-channel MOSFET, shorted to pins 1 and 3 externally. |
| 3 | S | passive | Source of the P-channel MOSFET, shorted to pins 1 and 2 externally. |
| 4 | G | input | Gate, with gate-source voltage limit of ±20 V and threshold of -1.2 to -2.2 V. |
| 5 | D | passive | Drain, rated for -100 V drain-source and -12 A continuous current, common with pins 6-8. |
| 6 | D | passive | Drain, rated for -100 V drain-source and -12 A continuous current, common with pins 5, 7 and 8. |
| 7 | D | passive | Drain, rated for -100 V drain-source and -12 A continuous current, common with pins 5, 6 and 8. |
| 8 | D | passive | Drain, rated for -100 V drain-source and -12 A continuous current, common with pins 5-7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -100 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID | | | -12 | A | Tc=25℃ | 1 |
| Drain Current-Continuous | ID | | | -8 | A | Tc=100℃ | 1 |
| Drain Current-Pulsed | IDM | | | -48 | A | | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | Tc=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 1 | W | Tc=100℃ | 1 |
| Avalanche energy | EAS | | | 195 | mJ | TJ=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -100 | | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.8 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 65 | 70 | mΩ | VGS=-10V, ID=-10A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 71 | 75 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | -12 | A | | 2 |
| Forward on Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-10A | 2 |
| Forward Transconductance | gFS | | 13 | | S | VDS=-5V,ID=-5A | 2 |
| Input Capacitance | Ciss | | 4507 | | pF | VDS=-50V,VGS=0V, F=1MHZ | 2 |
| Output Capacitance | Coss | | 97 | | pF | VDS=-50V,VGS=0V, F=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 15 | | pF | VDS=-50V,VGS=0V, F=1MHZ | 2 |
| Turn-on Delay Time | td(on) | | 49 | | nS | VGS=-10V,VDS=-50V, ID=-10A,RGEN=4.5Ω | 2 |
| Turn-on Rise Time | tr | | 71 | | nS | VGS=-10V,VDS=-50V, ID=-10A,RGEN=4.5Ω | 2 |
| Turn-Off Delay Time | td(off) | | 555 | | nS | VGS=-10V,VDS=-50V, ID=-10A,RGEN=4.5Ω | 2 |
| Turn-Off Fall Time | tf | | 187 | | nS | VGS=-10V,VDS=-50V, ID=-10A,RGEN=4.5Ω | 2 |
| Total Gate Charge | Qg | | 773 | | nC | VGS=-10V, VDS=-50V, ID=-10A | 2 |
| Gate-Source Charge | Qgs | | 17 | | nC | VGS=-10V, VDS=-50V, ID=-10A | 2 |
| Gate-Drain Charge | Qgd | | 9.1 | | nC | VGS=-10V, VDS=-50V, ID=-10A | 2 |
| Reverse Recovery Time | trr | | 32 | | ns | Isd=-10A , dI/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 49 | | nc | Isd=-10A , dI/dt=100A/µs , TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `AGM55P10S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm55p10s-etched.step` / `agm55p10s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm55p10s.step` / `agm55p10s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm55p10s-datasheet.pdf) (8 pp, sha256 `c0d3518ee31aa7d7`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm55p10s-datasheet.pdf)