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AGM55P10D

AGM-Semi · MOSFETs · TO-252

AGM55P10D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input of the P-channel MOSFET, rated for a maximum gate-source voltage of ±20 V.
2 D passive Drain of the P-channel MOSFET (also the exposed tab), with a drain-source voltage rating of -100 V and continuous drain current of -30 A at Tc=25℃ (package limited).
3 S passive Source of the P-channel MOSFET, with a body-diode source-drain current of -30 A maximum.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: AGM55P10D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm55p10d-etched.step / agm55p10d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm55p10d.step / agm55p10d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 17bc574ef8acdeea, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF