# AGM500P20D

**AGM-Semi** · MOSFETs · TO-252

AGM500P20D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -2.0 V to -4.0 V at ID=-250µA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage -200 V max, continuous current -12 A at Tc=25°C (package limited). |
| 3 | S | passive | Source; body diode continuous source current is -12 A max with VSD of -1.3 V max at IS=-5A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -200 |  |  | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID | -12 |  |  | A | Tc=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID | -7 |  |  | A | Tc=100℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 35 | W | Tc=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 13.9 | W | Tc=100℃ | 1 |
| Avalanche energy | EAS |  |  | 64 | mJ | (Note 3) TJ=25℃ VDD=-50V,Vgs=-10V ID=-16A, L=0.5mH,RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA |  |  | 50 | ℃/W | Steady State (Note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 3.6 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -200 |  |  | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-200V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -2 |  | -4 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 500 | 780 | mΩ | VGS=-10V, ID=-5A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | -12 | A |  | 2 |
| Forward on Voltage | VSD |  |  | -1.3 | V | VGS=0V,IS=-5A | 2 |

## CAD (KiCad official)

- Symbol: `AGM500P20D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `agm500p20d-etched.step` / `agm500p20d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm500p20d.step` / `agm500p20d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM-Semi datasheet](docs/agm500p20d-datasheet.pdf) (8 pp, sha256 `015702f44018265b`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm500p20d-datasheet.pdf)