# AGM435E

**AGM-Semi** · MOSFETs · SOT-23-3

AGM435E from AGM-Semi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of 1.2 V min to 2.2 V max at ID=250μA. |
| 2 | S | passive | Source; continuous drain current is 5.0 A at TA=25℃ (package limited), and body-diode continuous current is 5.0 A. |
| 3 | D | passive | Drain; drain-source voltage is rated 40 V, with RDS(on) of 20 mΩ typ (25 mΩ max) at VGS=10V, ID=5A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 20 | 25 | mΩ | VGS=10V, ID=5A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 24 | 30 | mΩ | VGS=4.5V, ID=3A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | 5 | A |  | 2 |
| Forward on Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=5A | 2 |
| Drain-Source Voltage | VDS |  |  | 40 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | 5 | A | TA=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID |  |  | 3.2 | A | TA=70℃ | 1 |
| Drain Current-Pulsed | IDM (pluse) |  |  | 20 | A | Note 2 | 1 |
| Maximum Power Dissipation | PD |  |  | 1.2 | w | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA |  |  | 104 | ℃/W | Steady State | 1 |

## CAD (KiCad official)

- Symbol: `AGM435E`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `agm435e-etched.step` / `agm435e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm435e.step` / `agm435e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM-Semi datasheet](docs/agm435e-datasheet.pdf) (8 pp, sha256 `738e93978483cd40`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm435e-datasheet.pdf)