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AGM425MC

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM425MC

AGM-Semi · MOSFETs · SOP-8

AGM425MC from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the first-listed (N-channel, 40V, 7.6A) device per the product summary order.
2 G1 input Gate of MOSFET 1, rated ±20V maximum VGS.
3 S2 passive Source of MOSFET 2; the second-listed (P-channel, -40V, -6.5A) device per the product summary order.
4 G2 input Gate of MOSFET 2, rated ±20V maximum VGS.
5 D2 passive Drain of MOSFET 2, tied with pin 6, with a drain-source rating of -40V.
6 D2 passive Drain of MOSFET 2, tied with pin 5, with a drain-source rating of -40V.
7 D1 passive Drain of MOSFET 1, tied with pin 8, with a drain-source rating of 40V.
8 D1 passive Drain of MOSFET 1, tied with pin 7, with a drain-source rating of 40V.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Ch Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V ID=250μA 2
N-Ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
N-Ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
N-Ch Gate Threshold Voltage VGS(th) 1.2 1.6 2.2 V VDS=VGS,ID=250μA 2
N-Ch Drain-Source On-State Resistance RDS(on) 15 25 mΩ VGS=10V, ID=15A 2
N-Ch Drain-Source On-State Resistance RDS(on) 21 38 mΩ VGS=4.5V, ID=10A 2
N-Ch Source-Drain Current (Body Diode) ISD 7.6 A 2
N-Ch Forward on Voltage VSD 1.2 V VGS=0V,IS=15A 2
P-Ch Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V ID=-250μA 3
P-Ch Zero Gate Voltage Drain Current IDSS -1 μA VDS=-40V,VGS=0V 3
P-Ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 3
P-Ch Gate Threshold Voltage VGS(th) -1.2 -1.5 -2.2 V VDS=VGS,ID=-250μA 3
P-Ch Drain-Source On-State Resistance RDS(on) 32 45 mΩ VGS=-10V, ID=-15A 3
P-Ch Drain-Source On-State Resistance RDS(on) 43 52 mΩ VGS=-4.5V, ID=-10A 3
P-Ch Source-Drain Current (Body Diode) ISD -6.5 A 3
P-Ch Forward on Voltage VSD -1.2 V VGS=0V,IS=-15A 3
N-Ch Drain-Source Voltage VDS 40 V VGS=0V, TA=25℃ 1
P-Ch Drain-Source Voltage VDS -40 V VGS=0V, TA=25℃ 1
N-Ch Gate-Source Voltage VGS -20 20 V VDS=0V 1
P-Ch Gate-Source Voltage VGS -20 20 V VDS=0V 1
N-Ch Continuous Drain Current ID 7.6 A TA=25℃ (Note 1) 1
P-Ch Continuous Drain Current ID -6.5 A TA=25℃ (Note 1) 1
N-Ch Continuous Drain Current ID 4.5 A TA=100℃ 1
P-Ch Continuous Drain Current ID -3.9 A TA=100℃ 1
P-Ch Pulsed Drain Current IDM -26 A (Note 2) 1
N-Ch Total Power Dissipation PD 2.5 W TA=25℃ 1
P-Ch Total Power Dissipation PD 2.5 W TA=25℃ 1
N-Ch Avalanche Energy EAS 56 mJ (Note 3) 1
P-Ch Avalanche Energy EAS 90 mJ (Note 3) 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ N-Ch and P-Ch 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
N-Ch Forward Transconductance gFS 9 S VDS=5V,ID=10A 2
N-Ch Input Capacitance Ciss 516 pF VDS=20V,VGS=0V, F=1MHZ 2
N-Ch Output Capacitance Coss 82 pF VDS=20V,VGS=0V, F=1MHZ 2
N-Ch Reverse Transfer Capacitance Crss 43 pF VDS=20V,VGS=0V, F=1MHZ 2
N-Ch Total Gate Charge Qg 8.9 nC VGS=10V, VDS=20V, ID=6A 2
P-Ch Forward Transconductance gFS 16 S VDS=-5V,ID=-10A 3
P-Ch Input Capacitance Ciss 1080 pF VDS=-20V,VGS=0V, F=1MHZ 3
P-Ch Output Capacitance Coss 87 pF VDS=-20V,VGS=0V, F=1MHZ 3
P-Ch Reverse Transfer Capacitance Crss 77 pF VDS=-20V,VGS=0V, F=1MHZ 3
P-Ch Gate resistance Rg 10.3 Ω VGS=0V, VDS=0V,f=1.0MHz 3
P-Ch Total Gate Charge Qg 17 nC VGS=-10V, VDS=-20V, ID=-6A 3

CAD (KiCad official)

  • Symbol: AGM425MC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm425mc-etched.step / agm425mc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm425mc.step / agm425mc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (12 pp, sha256 237bd7069f68e68c, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF