component
AGM420MC
Public Made by Adomby adom
AGM Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 15d ago |
| viewers | 15d ago |
| agm420mc-etched.glb | 15d ago |
| agm420mc-etched.step | 15d ago |
| agm420mc-hero.glb | 15d ago |
| agm420mc-hero.overlay.json | 15d ago |
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| agm420mc.kicad_mod | 15d ago |
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| agm420mc.step | 15d ago |
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| README.md | 15d ago |
AGM420MC
AGM Semi · MOSFETs · SOP-8
AGM420MC from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet gives no further limits for this pin (device VDS 40V/-40V, VGS ±20V). |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20V. |
| 3 | S2 | passive | Source of MOSFET 2; the datasheet gives no further limits for this pin (device VDS 40V/-40V, VGS ±20V). |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20V. |
| 5 | D2 | passive | Drain of MOSFET 2, tied internally with pin 6; drain-source voltage rated 40V (N-Ch) or -40V (P-Ch). |
| 6 | D2 | passive | Drain of MOSFET 2, tied internally with pin 5; drain-source voltage rated 40V (N-Ch) or -40V (P-Ch). |
| 7 | D1 | passive | Drain of MOSFET 1, tied internally with pin 8; drain-source voltage rated 40V (N-Ch) or -40V (P-Ch). |
| 8 | D1 | passive | Drain of MOSFET 1, tied internally with pin 7; drain-source voltage rated 40V (N-Ch) or -40V (P-Ch). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 40 | V | VGS=0V | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous (N-Ch) | ID | 7.6 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous (N-Ch) | ID | 5.5 | A | TA=100℃ | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -7.5 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -5.3 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed (N-Ch) | IDM | 30.4 | A | Note 2 (pulse width limited by max junction temperature) | 1 | ||
| Drain Current-Pulsed (P-Ch) | IDM | -30 | A | Note 2 (pulse width limited by max junction temperature) | 1 | ||
| Total Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 1 | W | TA=100℃ | 1 | ||
| Avalanche energy (N-Ch) | EAS | 64 | mJ | Note 3: TJ=25℃,VDD=25V,Vgs=10V,ID=16A,L=0.5mH,RG=25ohm | 1 | ||
| Avalanche energy (P-Ch) | EAS | 81 | mJ | Note 3: TJ=25℃,VDD=-25V,Vgs=-10V,ID=-18A, L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 18 | 24 | mΩ | VGS=10V, ID=6A | 2 | |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 24 | 38 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Source-Drain Current (Body Diode) (N-Ch) | ISD | 7.6 | A | 2 | |||
| Forward on Voltage (N-Ch) | VSD | 0.8 | 1.2 | V | VGS=0V,IS=6A | 2 | |
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -40 | V | VGS=0V ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | μA | VDS=-40V,VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1.2 | -1.5 | -2.2 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 26 | 34 | mΩ | VGS=-10V, ID=-6A | 3 | |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 38 | 49 | mΩ | VGS=-4.5V, ID=-5A | 3 | |
| Source-Drain Current (Body Diode) (P-Ch) | ISD | -7.5 | A | 3 | |||
| Forward on Voltage (P-Ch) | VSD | -1.2 | V | VGS=0V,IS=-6A | 3 |
CAD (KiCad official)
- Symbol:
AGM420MC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm420mc-etched.step/agm420mc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm420mc.step/agm420mc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (13 pp, sha256
960ba79f103047b6, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).