component
AGM420MBA
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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AGM420MBA
AGM-Semi · MOSFETs · SOP-8
AGM420MBA from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1, 40V, 18mΩ, 8.5A). |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with gate-source voltage limited to ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2, -40V, 40mΩ, -6.8A). |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with gate-source voltage limited to ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated -40V drain-source and tied internally to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated -40V drain-source and tied internally to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated 40V drain-source and tied internally to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated 40V drain-source and tied internally to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 40 | V | VGS=0V | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous (N-Ch) | ID | 8.5 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -6.8 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous (N-Ch) | ID | 5.1 | A | TA=100℃ | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -4.1 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed (N-Ch) | IDM (pluse) | 4 | A | Note 2: pulse width limited by max junction temperature | 1 | ||
| Drain Current-Pulsed (P-Ch) | IDM (pluse) | -27 | A | Note 2: pulse width limited by max junction temperature | 1 | ||
| Total Power Dissipation (N-Ch column) | PD | 2.5 | W | TA=25℃ | 1 | ||
| Total Power Dissipation (P-Ch column) | PD | 2.5 | W | TA=25℃ | 1 | ||
| Total Power Dissipation (N-Ch column) | PD | 1 | W | TA=100℃ | 1 | ||
| Total Power Dissipation (P-Ch column) | PD | 1 | W | TA=100℃ | 1 | ||
| Avalanche energy (N-Ch) | EAS | 56 | mJ | Note 3: TJ=25℃, VDD=25V, Vgs=10V, ID=15A, L=0.5mH, RG=25ohm | 1 | ||
| Avalanche energy (P-Ch) | EAS | 49 | mJ | Note 3: TJ=25℃, VDD=-25V, Vgs=-10V, ID=-14A, L=0.5mH, RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.2 | 1.8 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 18 | 24 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 27 | 35 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Total Gate Charge (N-Ch) | Qg | 8.9 | nC | VGS=10V, VDS=20V, ID=6A | 2 | ||
| Gate-Source Charge (N-Ch) | Qgs | 2.4 | nC | VGS=10V, VDS=20V, ID=6A | 2 | ||
| Source-Drain Current (Body Diode) (N-Ch) | ISD | 8.5 | A | 2 | |||
| Forward on Voltage (N-Ch) | VSD | 0.8 | 1.2 | V | VGS=0V,IS=4A | 2 | |
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -40 | V | VGS=0V ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | μA | VDS=-40V,VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1.2 | -2.2 | V | VDS=VGS,ID=-250μA | 3 | |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 40 | 58 | mΩ | VGS=-10V, ID=-4A | 3 | |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 61 | 78 | mΩ | VGS=-4.5V, ID=-3A | 3 | |
| Total Gate Charge (P-Ch) | Qg | 18 | nC | VGS=-10V, VDS=-20V, ID=-6A | 3 | ||
| Source-Drain Current (Body Diode) (P-Ch) | ISD | -6.8 | A | 3 | |||
| Forward on Voltage (P-Ch) | VSD | -1.2 | V | VGS=0V,IS=-3A | 3 |
CAD (KiCad official)
- Symbol:
AGM420MBA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm420mba-etched.step/agm420mba-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm420mba.step/agm420mba.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (11 pp, sha256
bc70c026779951ec, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).