component
AGM418M
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM418M
AGM-Semi · MOSFETs · SOP-8
AGM418M from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; drain-source voltage rating is 40 V and continuous drain current is 8.0 A at Ta=25℃. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is limited to ±20 V with a threshold of 1.2 V min to 2.5 V max at 250 µA. |
| 3 | S2 | passive | Source of MOSFET 2; drain-source voltage rating is 40 V and continuous drain current is 8.0 A at Ta=25℃. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is limited to ±20 V with a threshold of 1.2 V min to 2.5 V max at 250 µA. |
| 5 | D2 | passive | Drain of MOSFET 2, internally common with pin 6; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A. |
| 7 | D1 | passive | Drain of MOSFET 1, internally common with pin 8; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 8 | A | Ta=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 4.8 | A | Ta=100℃ | 1 | ||
| Drain Current-Continuous @ Current-Pulsed | IDM | 32 | A | Note 2 | 1 | ||
| Total Power Dissipation | PD | 2.5 | W | Ta=25℃ | 1 | ||
| Total Power Dissipation | PD | 1 | W | Ta=100℃ | 1 | ||
| Avalanche energy | EAS | 56 | mJ | Note 3 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 18 | 24 | mΩ | VGS=10V, ID=10A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 21 | 35 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 8 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 |
CAD (KiCad official)
- Symbol:
AGM418M - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm418m-etched.step/agm418m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm418m.step/agm418m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
570556c1eacf783a, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM418M
**AGM-Semi** · MOSFETs · SOP-8
AGM418M from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; drain-source voltage rating is 40 V and continuous drain current is 8.0 A at Ta=25℃. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is limited to ±20 V with a threshold of 1.2 V min to 2.5 V max at 250 µA. |
| 3 | S2 | passive | Source of MOSFET 2; drain-source voltage rating is 40 V and continuous drain current is 8.0 A at Ta=25℃. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is limited to ±20 V with a threshold of 1.2 V min to 2.5 V max at 250 µA. |
| 5 | D2 | passive | Drain of MOSFET 2, internally common with pin 6; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A. |
| 7 | D1 | passive | Drain of MOSFET 1, internally common with pin 8; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; drain-source breakdown voltage is 40 V min and pulsed drain current is 32 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID | | | 8 | A | Ta=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID | | | 4.8 | A | Ta=100℃ | 1 |
| Drain Current-Continuous @ Current-Pulsed | IDM | | | 32 | A | Note 2 | 1 |
| Total Power Dissipation | PD | | | 2.5 | W | Ta=25℃ | 1 |
| Total Power Dissipation | PD | | | 1 | W | Ta=100℃ | 1 |
| Avalanche energy | EAS | | | 56 | mJ | Note 3 | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA | | | 50 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 18 | 24 | mΩ | VGS=10V, ID=10A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 21 | 35 | mΩ | VGS=4.5V, ID=5A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | 8 | A | | 2 |
| Forward on Voltage | VSD | | | 1.2 | V | VGS=0V,IS=10A | 2 |
## CAD (KiCad official)
- Symbol: `AGM418M`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm418m-etched.step` / `agm418m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm418m.step` / `agm418m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm418m-datasheet.pdf) (8 pp, sha256 `570556c1eacf783a`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm418m-datasheet.pdf)